JPS5543840A - Power distributing structure of iil element - Google Patents

Power distributing structure of iil element

Info

Publication number
JPS5543840A
JPS5543840A JP11652178A JP11652178A JPS5543840A JP S5543840 A JPS5543840 A JP S5543840A JP 11652178 A JP11652178 A JP 11652178A JP 11652178 A JP11652178 A JP 11652178A JP S5543840 A JPS5543840 A JP S5543840A
Authority
JP
Japan
Prior art keywords
gnd
injector
iil
pad
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11652178A
Other languages
Japanese (ja)
Inventor
Yasushi Hatta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11652178A priority Critical patent/JPS5543840A/en
Publication of JPS5543840A publication Critical patent/JPS5543840A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To even potential difference on chip between injector and GND of each IIL gate by changing the width of a power wiring connected in common to IIL gates of more than one gradually in accordance with current flowing. CONSTITUTION:In IC, LSI tip 6 using an IIL device, a pad 2 for injector current supply and a pad 4 for GND are provided oppositely each other. Then, a metal wiring for the injector current supply is arranged wider in width in accordance as it comes near to the pad 2 for injector and that for GND also wider in accordance as it comes near to the pad 4 for GND. By arranging, such, a fluctuation on chip in potential drop on the metal wiring for injector and potential rise on the metal wiring for GND becomes linear with a nearly even grade, and thus a potential difference between injector and GND of each IIL gate can be evened on chip.
JP11652178A 1978-09-25 1978-09-25 Power distributing structure of iil element Pending JPS5543840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11652178A JPS5543840A (en) 1978-09-25 1978-09-25 Power distributing structure of iil element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11652178A JPS5543840A (en) 1978-09-25 1978-09-25 Power distributing structure of iil element

Publications (1)

Publication Number Publication Date
JPS5543840A true JPS5543840A (en) 1980-03-27

Family

ID=14689187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11652178A Pending JPS5543840A (en) 1978-09-25 1978-09-25 Power distributing structure of iil element

Country Status (1)

Country Link
JP (1) JPS5543840A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844743A (en) * 1981-09-10 1983-03-15 Fujitsu Ltd Semiconductor integrated circuit
JPS60143647A (en) * 1983-09-09 1985-07-29 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Integrated circuit chip structure for reducing inductance ofcircuit and provicing voltage gradient controlled
JPH03163865A (en) * 1990-11-02 1991-07-15 Toshiba Corp Semiconductor integrated circuit device
JPH0653211A (en) * 1991-01-22 1994-02-25 Nec Corp Resin-sealed semiconductor integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135279A (en) * 1976-05-07 1977-11-12 Toshiba Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135279A (en) * 1976-05-07 1977-11-12 Toshiba Corp Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844743A (en) * 1981-09-10 1983-03-15 Fujitsu Ltd Semiconductor integrated circuit
JPS60143647A (en) * 1983-09-09 1985-07-29 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Integrated circuit chip structure for reducing inductance ofcircuit and provicing voltage gradient controlled
JPH03163865A (en) * 1990-11-02 1991-07-15 Toshiba Corp Semiconductor integrated circuit device
JPH0653211A (en) * 1991-01-22 1994-02-25 Nec Corp Resin-sealed semiconductor integrated circuit

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