JPS5543872A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number: JPS5543872A
Authority: JP; Japan
Prior art keywords: base; oxide film; drain; channel region; source
Prior art date: 1978-09-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP11697878A

Other languages

English (en)

Inventor

Yoshiki Tanigawa

Kunihiko Hirashima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Pioneer Corp

Original Assignee

Pioneer Electronic Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-09-22

Filing date

1978-09-22

Publication date

1980-03-27

1978-09-22 Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp

1978-09-22 Priority to JP11697878A priority Critical patent/JPS5543872A/ja

1980-03-27 Publication of JPS5543872A publication Critical patent/JPS5543872A/ja

Status Pending legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1
229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
230000003647 oxidation Effects 0.000 abstract 1
238000007254 oxidation reaction Methods 0.000 abstract 1
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1

Landscapes

Bipolar Transistors (AREA)

JP11697878A 1978-09-22 1978-09-22 Insulating gate field effect transistor Pending JPS5543872A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP11697878A JPS5543872A (en)	1978-09-22	1978-09-22	Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11697878A JPS5543872A (en)	1978-09-22	1978-09-22	Insulating gate field effect transistor

Publications (1)

Publication Number	Publication Date
JPS5543872A true JPS5543872A (en)	1980-03-27

Family

ID=14700455

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11697878A Pending JPS5543872A (en)	1978-09-22	1978-09-22	Insulating gate field effect transistor

Country Status (1)

Country	Link
JP (1)	JPS5543872A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4571609A (en) *	1980-06-16	1986-02-18	Tokyo Shibaura Denki Kabushiki Kaisha	Stacked MOS device with means to prevent substrate floating
US5027177A (en) *	1989-07-24	1991-06-25	Hughes Aircraft Company	Floating base lateral bipolar phototransistor with field effect gate voltage control
US5294821A (en) *	1990-10-09	1994-03-15	Seiko Epson Corporation	Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS48101887A (ja) *	1972-04-01	1973-12-21

1978
- 1978-09-22 JP JP11697878A patent/JPS5543872A/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS48101887A (ja) *	1972-04-01	1973-12-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4571609A (en) *	1980-06-16	1986-02-18	Tokyo Shibaura Denki Kabushiki Kaisha	Stacked MOS device with means to prevent substrate floating
US5027177A (en) *	1989-07-24	1991-06-25	Hughes Aircraft Company	Floating base lateral bipolar phototransistor with field effect gate voltage control
US5294821A (en) *	1990-10-09	1994-03-15	Seiko Epson Corporation	Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors

Similar Documents

Publication	Publication Date	Title
JPS5742164A (en)	1982-03-09	Semiconductor device
JPS55133574A (en)	1980-10-17	Insulated gate field effect transistor
JPS5688354A (en)	1981-07-17	Semiconductor integrated circuit device
JPS5688363A (en)	1981-07-17	Field effect transistor
JPS55151363A (en)	1980-11-25	Mos semiconductor device and fabricating method of the same
JPS55146976A (en)	1980-11-15	Insulating gate field effect transistor
JPS55121682A (en)	1980-09-18	Field effect transistor
JPS55130171A (en)	1980-10-08	Mos field effect transistor
JPS54156483A (en)	1979-12-10	Non-volatile semiconductor memory device
JPS54136275A (en)	1979-10-23	Field effect transistor of isolation gate
JPS5457969A (en)	1979-05-10	Electric field effect transistor
JPS55140270A (en)	1980-11-01	Insulated gate transistor
JPS5636170A (en)	1981-04-09	Manufacture of field-effect semiconductor device
JPS6461060A (en)	1989-03-08	Semiconductor device
JPS6461059A (en)	1989-03-08	Semiconductor device
JPS54129984A (en)	1979-10-08	Manufacture of semiconductor device
JPS5673468A (en)	1981-06-18	Mos type semiconductor device
JPS5642372A (en)	1981-04-20	Manufacture of semiconductor device
JPS5723272A (en)	1982-02-06	Junction type field effect transistor
JPS5546585A (en)	1980-04-01	Complementary insulated gate field effect semiconductor device
JPS54144182A (en)	1979-11-10	Semiconductor device
JPS57134976A (en)	1982-08-20	Manufacture of field effect transistor
JPS558078A (en)	1980-01-21	Floating gate type mos field effect transistor
JPS55141760A (en)	1980-11-05	Field effect transistor
JPS572578A (en)	1982-01-07	Junction type field effect transistor