JPS5543883A - High-output photodiode - Google Patents

High-output photodiode

Info

Publication number
JPS5543883A
JPS5543883A JP11724578A JP11724578A JPS5543883A JP S5543883 A JPS5543883 A JP S5543883A JP 11724578 A JP11724578 A JP 11724578A JP 11724578 A JP11724578 A JP 11724578A JP S5543883 A JPS5543883 A JP S5543883A
Authority
JP
Japan
Prior art keywords
type
layer
light
junction
take
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11724578A
Other languages
Japanese (ja)
Inventor
Shinichi Iguchi
Yukihiro Sasaya
Shiro Nishine
Hiroshi Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP11724578A priority Critical patent/JPS5543883A/en
Publication of JPS5543883A publication Critical patent/JPS5543883A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE: To increase the light output from the light-take-out surface, by providing fine and irregular indentations on the light-take-out surface of an N-type Ga1-x AlxAs layer and thereby reducing the total reflection taking place at the boundary of air and the light-take-up surface.
CONSTITUTION: In this photodiode, N-type Ga1-xAlxAs layer 3, N-type Ga1-y AlyAs layer 11 and P-type GaAs layer 6 are formed by epitaxial growth on N-type GaAs base 2, a window reaching N-type Ga1-xAlxAs layer 3 is provided on a part of N-type CaAs base 2, and the surface on N-type Ga1-xAlxAs layer 3 is made rough. The junction between P-type region 13 diffused from P-type CaAs layer 6 and N-type Ga1-xAlxAs layer 3 forms light-emission region 9. Since N-type Ga1-y AlyAs layer 11 has a larger band gap than N-type Ga1-xAlxAs layer 12, current does not flow in the junction with P-type region 13 but concentrates and flows in the junction between P-type region 13 and the Ga1-xAlxAs layer.
COPYRIGHT: (C)1980,JPO&Japio
JP11724578A 1978-09-22 1978-09-22 High-output photodiode Pending JPS5543883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11724578A JPS5543883A (en) 1978-09-22 1978-09-22 High-output photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11724578A JPS5543883A (en) 1978-09-22 1978-09-22 High-output photodiode

Publications (1)

Publication Number Publication Date
JPS5543883A true JPS5543883A (en) 1980-03-27

Family

ID=14706972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11724578A Pending JPS5543883A (en) 1978-09-22 1978-09-22 High-output photodiode

Country Status (1)

Country Link
JP (1) JPS5543883A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60199603A (en) * 1984-03-23 1985-10-09 松下電工株式会社 Mosaic pattern decorative veneer and manufacture thereof
US5898192A (en) * 1995-10-09 1999-04-27 Temic Telefunken Microelectronic Gmbh Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface
US6265236B1 (en) * 1995-10-09 2001-07-24 Temic Telefunken Microelectronic Gmbh Method for the manufacture of a light emitting diode
US7972892B2 (en) 2004-02-26 2011-07-05 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60199603A (en) * 1984-03-23 1985-10-09 松下電工株式会社 Mosaic pattern decorative veneer and manufacture thereof
US5898192A (en) * 1995-10-09 1999-04-27 Temic Telefunken Microelectronic Gmbh Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface
US6265236B1 (en) * 1995-10-09 2001-07-24 Temic Telefunken Microelectronic Gmbh Method for the manufacture of a light emitting diode
US7972892B2 (en) 2004-02-26 2011-07-05 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same

Similar Documents

Publication Publication Date Title
JPS52104091A (en) Light-emitting semiconductor
JPS5572084A (en) Semiconductor photo-detector
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS5572083A (en) Semiconductor photo-detector
JPS5574190A (en) Photoelectro-converting semiconductor device
JPS5563887A (en) Light-emitting diode
JPS5561078A (en) Manufacture of guard ring-fitted photodiode
JPS55107281A (en) Microregion luminous diode
JPS55124280A (en) Method of fabricating light emitting diode
JPS55162223A (en) Semiconductor device and its preparation
JPS54107287A (en) Semiconductor light emission diode
JPS54110792A (en) Avalanche photo diode
JPS577978A (en) Opto-electronic switch
JPS5779679A (en) Semiconductor photoelectric conversion device
JPS5591893A (en) Semiconductor laser having a light-guide
JPS5736876A (en) Semiconductor photodetector
JPS5580386A (en) Manufacture of semiconductor light emitting device
JPS56111275A (en) Luminous semiconductor device
JPS55103778A (en) Light-emitting diode
JPS6474767A (en) Semiconductor photodetector
JPS57147285A (en) Zener diode
JPS57166088A (en) Electrode of luminus diode
JPS54107285A (en) Semiconductor light emission diode
JPS52155083A (en) Avalanche photo diode
JPS55125684A (en) Semiconductor photodetector element