JPS5544965A - Testing method of semiconductor device - Google Patents

Testing method of semiconductor device

Info

Publication number
JPS5544965A
JPS5544965A JP11879978A JP11879978A JPS5544965A JP S5544965 A JPS5544965 A JP S5544965A JP 11879978 A JP11879978 A JP 11879978A JP 11879978 A JP11879978 A JP 11879978A JP S5544965 A JPS5544965 A JP S5544965A
Authority
JP
Japan
Prior art keywords
transistor
lifetime
measure
preset time
backward voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11879978A
Other languages
Japanese (ja)
Inventor
Hiroshi Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11879978A priority Critical patent/JPS5544965A/en
Publication of JPS5544965A publication Critical patent/JPS5544965A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure the change in the electric characteristics of a semiconductor thereby to measure the influence upon the reliability and lifetime for a short time by impressing a backward voltage between the electrodes of the device and by continuing that condition for a longer period than a preset time.
CONSTITUTION: A transistor 1 is held in a constant temperature bath 2, and a suitable backward voltage is impressed for a preset time between the collector and base of the transistor 1. After the continuation for several ten to hundred hours, the leak current, current amplification and forward drop of the transistor are measured and compared with the values before the tests so that the influences upon the reliablity and lifetime of a semiconductor chip can be judged.
COPYRIGHT: (C)1980,JPO&Japio
JP11879978A 1978-09-26 1978-09-26 Testing method of semiconductor device Pending JPS5544965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11879978A JPS5544965A (en) 1978-09-26 1978-09-26 Testing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11879978A JPS5544965A (en) 1978-09-26 1978-09-26 Testing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5544965A true JPS5544965A (en) 1980-03-29

Family

ID=14745393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11879978A Pending JPS5544965A (en) 1978-09-26 1978-09-26 Testing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5544965A (en)

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