JPS5546404A - Metal-halogen thin film cell - Google Patents
Metal-halogen thin film cellInfo
- Publication number
- JPS5546404A JPS5546404A JP11913878A JP11913878A JPS5546404A JP S5546404 A JPS5546404 A JP S5546404A JP 11913878 A JP11913878 A JP 11913878A JP 11913878 A JP11913878 A JP 11913878A JP S5546404 A JPS5546404 A JP S5546404A
- Authority
- JP
- Japan
- Prior art keywords
- active material
- layer
- cathode
- anode
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052736 halogen Inorganic materials 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 4
- 239000011149 active material Substances 0.000 abstract 3
- 239000006182 cathode active material Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 150000002367 halogens Chemical class 0.000 abstract 2
- 150000002894 organic compounds Chemical class 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000006183 anode active material Substances 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 150000002391 heterocyclic compounds Chemical class 0.000 abstract 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 abstract 1
- -1 phthalic acid imide Chemical class 0.000 abstract 1
- UMHSKYSHOIGDPE-UHFFFAOYSA-N pyridine;quinoline Chemical compound C1=CC=NC=C1.N1=CC=CC2=CC=CC=C21 UMHSKYSHOIGDPE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 abstract 1
- 229960002317 succinimide Drugs 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
Classifications
-
- Y02E60/12—
Landscapes
- Conductive Materials (AREA)
- Primary Cells (AREA)
Abstract
PURPOSE: To make the promotion of improvement for cell life, by providing a barrier layer, consisting of a specific organic compound, between active materials of cathode and anode of the cell that uses a metal cathode active material and halogen anode active material.
CONSTITUTION: The construction is made by a cathode layer, with a thin layer of metals, selected from silver, copper, tin, lead, aluminum, bismuth, tellrium, being the acrive material, and an anode layer of the active material including halogens like bromine, iodine, etc. Between these active material layers of cathode and anode, is provided a barrier layer including at least more than one kind of the organic compounds selected from among succinic acid imide, phthalic acid imide, cyanuric acid. And further to improve the cell life, between the cathode active material layer and the barrier layer, is constructed a metal halogen compound or oxide layer of the cathode active material by the methods of evaporation, and it is preferable to mix an aromatic N heterocyclic compound, for instance, pyridine quinoline to the barrier layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11913878A JPS5546404A (en) | 1978-09-29 | 1978-09-29 | Metal-halogen thin film cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11913878A JPS5546404A (en) | 1978-09-29 | 1978-09-29 | Metal-halogen thin film cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5546404A true JPS5546404A (en) | 1980-04-01 |
Family
ID=14753864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11913878A Pending JPS5546404A (en) | 1978-09-29 | 1978-09-29 | Metal-halogen thin film cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546404A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02269719A (en) * | 1989-03-03 | 1990-11-05 | Internatl Business Mach Corp <Ibm> | Photo-setting adhesive |
-
1978
- 1978-09-29 JP JP11913878A patent/JPS5546404A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02269719A (en) * | 1989-03-03 | 1990-11-05 | Internatl Business Mach Corp <Ibm> | Photo-setting adhesive |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS553971A (en) | Thermal recording material | |
| GB1505720A (en) | Solid electrolyte cells | |
| DE2262256C3 (en) | Galvanic element | |
| FR2525396B1 (en) | ||
| CA2046243A1 (en) | Electroluminescent device with stabilized cathode | |
| JPS5539146A (en) | Primary cell | |
| ES479032A1 (en) | Electrodes for electrolytic processes. | |
| KR920015156A (en) | Electrolyte and Optoelectronic Device Using the Same | |
| US4496638A (en) | Solid-electrolyte cell | |
| NL7908459A (en) | POSITIVELY ACTIVE SOLID FOR ELECTROCHEMICAL GENERATORS WITH LARGE SPECIFIC ENERGY. | |
| GB1277033A (en) | Electrodes for electrochemical cells | |
| JPS5546404A (en) | Metal-halogen thin film cell | |
| FR2399742A1 (en) | MATERIALS FOR SOLID CONSTITUENT BATTERY CATHODES | |
| JPS559305A (en) | Thin metal-layer-halogen-type cell | |
| JPS55126480A (en) | Recording member | |
| JPS5586071A (en) | Metal-halogen thin film battery | |
| JPS5224483A (en) | Phptoconducting element | |
| JPS5546405A (en) | Metal-halogen thin film cell | |
| GB1141944A (en) | Photoconductors | |
| JPS5578468A (en) | Metal-halogen film battery | |
| JPS5549868A (en) | Metal-halogen thin type battery | |
| JPS5691222A (en) | Electrochromic display device | |
| JPS56120075A (en) | Solid electrolyte battery | |
| JP2019036452A (en) | Organic electroluminescent device | |
| JPS5573776A (en) | Low-speed electron beam-exciting fluorescent substance and fluorescent display device provided with the same |