JPS5548960A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5548960A
JPS5548960A JP12118978A JP12118978A JPS5548960A JP S5548960 A JPS5548960 A JP S5548960A JP 12118978 A JP12118978 A JP 12118978A JP 12118978 A JP12118978 A JP 12118978A JP S5548960 A JPS5548960 A JP S5548960A
Authority
JP
Japan
Prior art keywords
collectors
transistors
emitters
transistor
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12118978A
Other languages
Japanese (ja)
Other versions
JPS5950229B2 (en
Inventor
Kiyoshi Aoki
Taaki Ichise
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53121189A priority Critical patent/JPS5950229B2/en
Priority to US06/198,953 priority patent/US4366554A/en
Priority to DE7979901095T priority patent/DE2967103D1/en
Priority to PCT/JP1979/000235 priority patent/WO1980000761A1/en
Publication of JPS5548960A publication Critical patent/JPS5548960A/en
Priority to EP79901095A priority patent/EP0020769B1/en
Publication of JPS5950229B2 publication Critical patent/JPS5950229B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make it possible to read and write in word units, by connecting No.2 conduction type transistor, which becomes a load, to No.1 conduction type transistor, which is connected crosswise with No.1 word line and a pair of data lines, and making them readout. CONSTITUTION:A pair of npn transistors T1 and T2 are connected crosswise by using wires 2 and 3. Their bases are connected to each other's collectors and their emitters are connected in common. Next, between the collectors of these transistors T1 and T2 , and word line W, are connected the collectors and emitters of pnp transistors T3 and T4, which are load impedance, and the bases of T1 and T2 and No.1 and No.2 data lines D1 and D2 are connected with the collectors and emitters of pnp transistors T5 and T6. T2 is provided with two collectors, one being connected to T4 and the other to the base of npn transistor T7. This base is connected to the collector of pnp transistor T3, and the emitter of T3 is connected to row selecting line R.
JP53121189A 1978-10-03 1978-10-03 semiconductor memory cell Expired JPS5950229B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP53121189A JPS5950229B2 (en) 1978-10-03 1978-10-03 semiconductor memory cell
US06/198,953 US4366554A (en) 1978-10-03 1979-09-04 I2 L Memory device
DE7979901095T DE2967103D1 (en) 1978-10-03 1979-09-04 Semiconductor memory device
PCT/JP1979/000235 WO1980000761A1 (en) 1978-10-03 1979-09-04 Semiconductor memory device
EP79901095A EP0020769B1 (en) 1978-10-03 1980-04-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53121189A JPS5950229B2 (en) 1978-10-03 1978-10-03 semiconductor memory cell

Publications (2)

Publication Number Publication Date
JPS5548960A true JPS5548960A (en) 1980-04-08
JPS5950229B2 JPS5950229B2 (en) 1984-12-07

Family

ID=14805051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53121189A Expired JPS5950229B2 (en) 1978-10-03 1978-10-03 semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5950229B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577087A (en) * 1978-12-04 1980-06-10 Gen Instrument Corp Memory unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577087A (en) * 1978-12-04 1980-06-10 Gen Instrument Corp Memory unit

Also Published As

Publication number Publication date
JPS5950229B2 (en) 1984-12-07

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