JPS5548982A - Photo-combination semiconductor switching device - Google Patents
Photo-combination semiconductor switching deviceInfo
- Publication number
- JPS5548982A JPS5548982A JP12077779A JP12077779A JPS5548982A JP S5548982 A JPS5548982 A JP S5548982A JP 12077779 A JP12077779 A JP 12077779A JP 12077779 A JP12077779 A JP 12077779A JP S5548982 A JPS5548982 A JP S5548982A
- Authority
- JP
- Japan
- Prior art keywords
- photo
- transistor
- penbp
- sensitivity
- sheltering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thyristors (AREA)
Abstract
PURPOSE: To obtain a photo-combination switching device, which has a high ignition sensitivity and less erroneous operation, by providing light-sheltering film on a high-sensitivity section of a pEnBp transistor.
CONSTITUTION: A part of a side-surface light b and a main-surface light C causes a current to a pEnBp transistor, and as it is conducted by flowing into a base of an erroneous-operation-preventing transistor 2 by dv/dt, a K-G resistance of a photo SCR is formed on an SiO2 9 and, at the same time, an aluminum light-sheltering film is selectively formed, and when a high-photo-sensitivity of the pEnBp transistor is covered, the photo-current generating distribution becomes the maximum in a space-lacking layer of a conversely biased nEp joint and, when departed from this, it is decreased in the manner of function of index following diffusion length of an electron or a positive hole. If sheltering 8 is conducted from the joint's space-lacking layer and its both ends inward NB and p sides, respectively, by diffusion length of the positive hole and the electron, the photocurrent generation of the pEnBp transistor can be effectively prevented, erroneous operation of the device can be prevented and the ignition speed can be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12077779A JPS5548982A (en) | 1979-09-21 | 1979-09-21 | Photo-combination semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12077779A JPS5548982A (en) | 1979-09-21 | 1979-09-21 | Photo-combination semiconductor switching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5548982A true JPS5548982A (en) | 1980-04-08 |
| JPS5643626B2 JPS5643626B2 (en) | 1981-10-14 |
Family
ID=14794739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12077779A Granted JPS5548982A (en) | 1979-09-21 | 1979-09-21 | Photo-combination semiconductor switching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5548982A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
-
1979
- 1979-09-21 JP JP12077779A patent/JPS5548982A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5643626B2 (en) | 1981-10-14 |
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