JPS55501080A - - Google Patents
Info
- Publication number
- JPS55501080A JPS55501080A JP50049580A JP50049580A JPS55501080A JP S55501080 A JPS55501080 A JP S55501080A JP 50049580 A JP50049580 A JP 50049580A JP 50049580 A JP50049580 A JP 50049580A JP S55501080 A JPS55501080 A JP S55501080A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/007,790 US4231050A (en) | 1979-01-30 | 1979-01-30 | Reduction of surface recombination current in GaAs devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55501080A true JPS55501080A (ja) | 1980-12-04 |
Family
ID=21728157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50049580A Pending JPS55501080A (ja) | 1979-01-30 | 1980-01-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4231050A (ja) |
| EP (1) | EP0022857A4 (ja) |
| JP (1) | JPS55501080A (ja) |
| IT (1) | IT1150082B (ja) |
| WO (1) | WO1980001624A1 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663643A (en) * | 1981-04-23 | 1987-05-05 | Fujitsu Limited | Semiconductor device and process for producing the same |
| KR900000074B1 (ko) * | 1981-10-02 | 1990-01-19 | 미쓰다 가쓰시게 | 광 검출용 반도체장치 |
| US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
| JPS5955073A (ja) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | 半導体装置 |
| US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
| GB2132016B (en) * | 1982-12-07 | 1986-06-25 | Kokusai Denshin Denwa Co Ltd | A semiconductor device |
| US4578126A (en) * | 1983-06-22 | 1986-03-25 | Trw Inc. | Liquid phase epitaxial growth process |
| US4531143A (en) * | 1983-10-14 | 1985-07-23 | Joseph Maserjian | Laser activated MTOS microwave device |
| US5293073A (en) * | 1989-06-27 | 1994-03-08 | Kabushiki Kaisha Toshiba | Electrode structure of a semiconductor device which uses a copper wire as a bonding wire |
| TW319916B (ja) * | 1995-06-05 | 1997-11-11 | Hewlett Packard Co | |
| US6794731B2 (en) | 1997-02-18 | 2004-09-21 | Lumileds Lighting U.S., Llc | Minority carrier semiconductor devices with improved reliability |
| US6891202B2 (en) * | 2001-12-14 | 2005-05-10 | Infinera Corporation | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
| US8033693B2 (en) * | 2009-04-30 | 2011-10-11 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Lighting structure with multiple reflective surfaces |
| US9136402B2 (en) * | 2012-02-28 | 2015-09-15 | International Business Machines Corporation | High efficiency flexible solar cells for consumer electronics |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2865646A (en) * | 1957-06-11 | 1958-12-23 | Kronhaus Henry | Foldaway tea cart |
| JPS5235999B2 (ja) * | 1974-08-26 | 1977-09-12 | ||
| US4062035A (en) * | 1975-02-05 | 1977-12-06 | Siemens Aktiengesellschaft | Luminescent diode |
| US3993506A (en) * | 1975-09-25 | 1976-11-23 | Varian Associates | Photovoltaic cell employing lattice matched quaternary passivating layer |
| FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
| US4141021A (en) * | 1977-02-14 | 1979-02-20 | Varian Associates, Inc. | Field effect transistor having source and gate electrodes on opposite faces of active layer |
| US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
-
1979
- 1979-01-30 US US06/007,790 patent/US4231050A/en not_active Expired - Lifetime
-
1980
- 1980-01-21 WO PCT/US1980/000048 patent/WO1980001624A1/en not_active Ceased
- 1980-01-21 JP JP50049580A patent/JPS55501080A/ja active Pending
- 1980-01-29 IT IT19551/80A patent/IT1150082B/it active
- 1980-08-12 EP EP19800900370 patent/EP0022857A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| IT1150082B (it) | 1986-12-10 |
| US4231050A (en) | 1980-10-28 |
| EP0022857A4 (en) | 1982-01-11 |
| EP0022857A1 (en) | 1981-01-28 |
| WO1980001624A1 (en) | 1980-08-07 |
| IT8019551A0 (it) | 1980-01-29 |