JPS5555595A - Semiconductor light amplifier - Google Patents
Semiconductor light amplifierInfo
- Publication number
- JPS5555595A JPS5555595A JP12780778A JP12780778A JPS5555595A JP S5555595 A JPS5555595 A JP S5555595A JP 12780778 A JP12780778 A JP 12780778A JP 12780778 A JP12780778 A JP 12780778A JP S5555595 A JPS5555595 A JP S5555595A
- Authority
- JP
- Japan
- Prior art keywords
- light
- end surfaces
- pulse
- current pulse
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To totally reflect or partially reflect light incident on an active totally waveguide path in zigzag manner on the end surfaces thereof to amplify the same, and to drive the thus amplified light by a current pulse synchronizing with the light pulse line of input signal thereby to amplify and shape the light pulse line of the input signal having a widened pulse width. CONSTITUTION:Reflection preventive films 24 made of Al2O3, SiO, CaWO4 and the like are evaporated on parts at the end surfaces on which input light 6 is injected and parts at the end surfaces from which output light 7 is emitted. At the end surfaces on which light is reflected, evaporated are dielectric films made of SiO, Al2O3 and the like in a certain length, and thereon provided is a reflection film 18 made of a metal such as copper, silver or the like. Light 6 propagated in the active layer at an angle of deflection theta', and advances in the width of a light waveguide path 51. Light 71 which has partially permeated is converted into an electric signal 73 by a photodetector 72 and a timing component 75 is extracted in a timing extraction circuit 74, and a driving current pulse 77 is produced in a pulse generator 76 on the basis of the component 75, the thus produced driving current pulse is applied to a lead wire 16. Thereafter, light amplified by the waveguide 51 is picked up as a light 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12780778A JPS5555595A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12780778A JPS5555595A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5555595A true JPS5555595A (en) | 1980-04-23 |
Family
ID=14969154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12780778A Pending JPS5555595A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5555595A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001035504A3 (en) * | 1999-11-10 | 2001-12-06 | Infineon Technologies Ag | High-powered laser arrangement |
| JP2009267119A (en) * | 2008-04-25 | 2009-11-12 | Seiko Epson Corp | Light-emitting device |
| JP2010161104A (en) * | 2009-01-06 | 2010-07-22 | Seiko Epson Corp | Light emitting device and layered light emitting device |
| JP2010177437A (en) * | 2009-01-29 | 2010-08-12 | Seiko Epson Corp | Light-emitting device |
-
1978
- 1978-10-19 JP JP12780778A patent/JPS5555595A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001035504A3 (en) * | 1999-11-10 | 2001-12-06 | Infineon Technologies Ag | High-powered laser arrangement |
| JP2009267119A (en) * | 2008-04-25 | 2009-11-12 | Seiko Epson Corp | Light-emitting device |
| JP2010161104A (en) * | 2009-01-06 | 2010-07-22 | Seiko Epson Corp | Light emitting device and layered light emitting device |
| JP2010177437A (en) * | 2009-01-29 | 2010-08-12 | Seiko Epson Corp | Light-emitting device |
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