JPS5555607A - Parametric amplifier - Google Patents

Parametric amplifier

Info

Publication number
JPS5555607A
JPS5555607A JP12899678A JP12899678A JPS5555607A JP S5555607 A JPS5555607 A JP S5555607A JP 12899678 A JP12899678 A JP 12899678A JP 12899678 A JP12899678 A JP 12899678A JP S5555607 A JPS5555607 A JP S5555607A
Authority
JP
Japan
Prior art keywords
line
gain
subresonator
band
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12899678A
Other languages
Japanese (ja)
Inventor
Toshio Nakazawa
Taiji Taketomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12899678A priority Critical patent/JPS5555607A/en
Publication of JPS5555607A publication Critical patent/JPS5555607A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F7/00—Parametric amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To avoid the deterioration of noise temperature at the upper end of band, by providing gain compensation line between the signal main resonator and the signal subresonator. CONSTITUTION:The 1/4 wave length lines 5 and 6 constitute the impedance transformer and the subresonator, and the gain compensation line 7 has the characteristics impedance almost the same as negative resistance at the series resonance point of the main resonator. The shortest line length of the line 7 is 1/4 wave length or less, and the circuit at diode side from the B-B' of the line 7 constitutes the parallel resonant circuit. By selecting the characteristics impedances Z01 and Z02 of the lines 5 and 6 to obtain the Q required for flat gain, the gain characteristics can be made flat to reduce the deterioration due to noise temperature at the upper end of band.
JP12899678A 1978-10-19 1978-10-19 Parametric amplifier Pending JPS5555607A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12899678A JPS5555607A (en) 1978-10-19 1978-10-19 Parametric amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12899678A JPS5555607A (en) 1978-10-19 1978-10-19 Parametric amplifier

Publications (1)

Publication Number Publication Date
JPS5555607A true JPS5555607A (en) 1980-04-23

Family

ID=14998548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12899678A Pending JPS5555607A (en) 1978-10-19 1978-10-19 Parametric amplifier

Country Status (1)

Country Link
JP (1) JPS5555607A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121339A (en) * 1992-03-26 1993-05-18 Semiconductor Energy Lab Co Ltd Apparatus for forming coating film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121339A (en) * 1992-03-26 1993-05-18 Semiconductor Energy Lab Co Ltd Apparatus for forming coating film

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