JPS5565146A - Characteristic measuring method for charge trap center in insulator - Google Patents

Characteristic measuring method for charge trap center in insulator

Info

Publication number
JPS5565146A
JPS5565146A JP13841978A JP13841978A JPS5565146A JP S5565146 A JPS5565146 A JP S5565146A JP 13841978 A JP13841978 A JP 13841978A JP 13841978 A JP13841978 A JP 13841978A JP S5565146 A JPS5565146 A JP S5565146A
Authority
JP
Japan
Prior art keywords
center
positive
current
voltage characteristics
charge trap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13841978A
Other languages
Japanese (ja)
Other versions
JPS6213619B2 (en
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13841978A priority Critical patent/JPS5565146A/en
Publication of JPS5565146A publication Critical patent/JPS5565146A/en
Publication of JPS6213619B2 publication Critical patent/JPS6213619B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To obtain the position of the center of gravity of vertical distribution and the surface density of charge trap center from the variation of the current-voltage characteristics, by producing the electron and positive hole pairs through the irradiation of electron rays on the surface of insulation film of MOS construction and measuring the current-voltage characteristics through the metal electrode applied with positive and negative DC voltage.
CONSTITUTION: Electron beam 2 is radiated on the surface of the oxide film 1b through the gate metal electrode 1c of MOS diode 1 to produce the electrons and positive holes, and the current- voltage characteristics are measured with the voltmeter 4 and the ammeter 5 by applying the gate voltage of positive and negative polarity to the metal electrode 1c with the DC power supply 3. After electrons or positive holes are injected in the oxide film 1b with avalanche injection and they are trapped at the trap, the current-voltage characteristics are similarly measured. With known relation of equation from the amount of variation of this characteristic, the surface density of the charge trap center in the insulation film and the spatial distribution toward surface vertical direction for the center of gravity are obtained. Thus, the measurement of trap which is a cause to the instability of MOST can simply be measured.
COPYRIGHT: (C)1980,JPO&Japio
JP13841978A 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator Granted JPS5565146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13841978A JPS5565146A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13841978A JPS5565146A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Publications (2)

Publication Number Publication Date
JPS5565146A true JPS5565146A (en) 1980-05-16
JPS6213619B2 JPS6213619B2 (en) 1987-03-27

Family

ID=15221516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13841978A Granted JPS5565146A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Country Status (1)

Country Link
JP (1) JPS5565146A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102213693A (en) * 2011-04-08 2011-10-12 北京大学 Method for testing trap density of gate dielectric layer of semiconductor device without extending substrate
CN104198570A (en) * 2014-09-10 2014-12-10 国家电网公司 Device and method for calculating trap parameters by measuring attenuation of short-circuit current under reverse bias

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023228338A1 (en) * 2022-05-25 2023-11-30 株式会社日立ハイテク Charged particle beam device, and measurement method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102213693A (en) * 2011-04-08 2011-10-12 北京大学 Method for testing trap density of gate dielectric layer of semiconductor device without extending substrate
CN104198570A (en) * 2014-09-10 2014-12-10 国家电网公司 Device and method for calculating trap parameters by measuring attenuation of short-circuit current under reverse bias

Also Published As

Publication number Publication date
JPS6213619B2 (en) 1987-03-27

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