JPS5565476A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS5565476A
JPS5565476A JP13953478A JP13953478A JPS5565476A JP S5565476 A JPS5565476 A JP S5565476A JP 13953478 A JP13953478 A JP 13953478A JP 13953478 A JP13953478 A JP 13953478A JP S5565476 A JPS5565476 A JP S5565476A
Authority
JP
Japan
Prior art keywords
thin layer
layer
defectiveness
wafer
leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13953478A
Other languages
Japanese (ja)
Inventor
Kimiaki Katsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13953478A priority Critical patent/JPS5565476A/en
Publication of JPS5565476A publication Critical patent/JPS5565476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a stable characteristic free from wave-form defectiveness and leakage by fixing an n-type GaAs thin layer on a heat conductive plate with its surface opposite thereto and forming a pair of ohmic terminal and gate terminal on the surface of the thin layer. CONSTITUTION:A wafer 14 is formed by subjecting Al0.7Ga0.3As layer 12 and n-type GaAs thin layer 13 to epitaxial growth on a single crystal GaAs substrate 11. Then, the thin layer 13 is fixed on a heat conductive plate or diamond heat sink plate 25 for example with a heat resisting insulating inorganic adhesive 24 with the surface of the thin layer 13 of the wafer 14 opposite thereto. After that, the layer 12 is removed through etching to release the substrate 11, and a pair of ohmic terminals 44 and 45 and a shot key barrier gate terminal 46 are formed on the surface of the thin layer 13. A stable characteristic free from wave-form defectiveness and leakage is thus obtainable.
JP13953478A 1978-11-13 1978-11-13 Manufacture of field effect transistor Pending JPS5565476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13953478A JPS5565476A (en) 1978-11-13 1978-11-13 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13953478A JPS5565476A (en) 1978-11-13 1978-11-13 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS5565476A true JPS5565476A (en) 1980-05-16

Family

ID=15247506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13953478A Pending JPS5565476A (en) 1978-11-13 1978-11-13 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5565476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131263A (en) * 1984-07-23 1986-02-13 Canon Inc Liquid jet recording head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131263A (en) * 1984-07-23 1986-02-13 Canon Inc Liquid jet recording head

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