JPS5567149A - Measuring of semiconductor - Google Patents

Measuring of semiconductor

Info

Publication number
JPS5567149A
JPS5567149A JP14089878A JP14089878A JPS5567149A JP S5567149 A JPS5567149 A JP S5567149A JP 14089878 A JP14089878 A JP 14089878A JP 14089878 A JP14089878 A JP 14089878A JP S5567149 A JPS5567149 A JP S5567149A
Authority
JP
Japan
Prior art keywords
eddy current
carriers
coil
change
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14089878A
Other languages
Japanese (ja)
Inventor
Takaharu Nawata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14089878A priority Critical patent/JPS5567149A/en
Publication of JPS5567149A publication Critical patent/JPS5567149A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable the measuring for lifetime of carriers and the resistivity without contact, by irradiating light pulses upon the total obverse side of a semiconductor to cause an eddy current therein and detecting the attenuation of the carriers in terms of the change in the eddy current. CONSTITUTION:A core 3 with a coil 4 is placed near the reverse side of a semiconductor substrate 1. A capacitor 5 is coupled in parallel with the coil 4. One terminal of the capacitor is connected to an AC power source 7 through a current detection resistor 6. Light pulses 2 are irradiated upon the entire obverse side of the substrate 1 to cause an eddy current therein. The change in the eddy current is measured through the terminals of the resistor 6. The change in carriers, which are caused by the light irradiation and which attenuate due to recombination when the light irradiation is stopped, is detected in terms of the variation in the eddy current. The coil 4 is displaced to measure the nonuniformity of the distribution of defects in the substrate 1.
JP14089878A 1978-11-15 1978-11-15 Measuring of semiconductor Pending JPS5567149A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14089878A JPS5567149A (en) 1978-11-15 1978-11-15 Measuring of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14089878A JPS5567149A (en) 1978-11-15 1978-11-15 Measuring of semiconductor

Publications (1)

Publication Number Publication Date
JPS5567149A true JPS5567149A (en) 1980-05-21

Family

ID=15279351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14089878A Pending JPS5567149A (en) 1978-11-15 1978-11-15 Measuring of semiconductor

Country Status (1)

Country Link
JP (1) JPS5567149A (en)

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