JPS5567997A - Ternary programmable read-only memory circuit - Google Patents

Ternary programmable read-only memory circuit

Info

Publication number
JPS5567997A
JPS5567997A JP13969478A JP13969478A JPS5567997A JP S5567997 A JPS5567997 A JP S5567997A JP 13969478 A JP13969478 A JP 13969478A JP 13969478 A JP13969478 A JP 13969478A JP S5567997 A JPS5567997 A JP S5567997A
Authority
JP
Japan
Prior art keywords
diodes
lines
ternary
line
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13969478A
Other languages
Japanese (ja)
Other versions
JPS6115520B2 (en
Inventor
Hideyuki Tsujimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13969478A priority Critical patent/JPS5567997A/en
Publication of JPS5567997A publication Critical patent/JPS5567997A/en
Publication of JPS6115520B2 publication Critical patent/JPS6115520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To obtain a ternary PROM of simple constitution which operates stably by providing easy-to-break diodes between selection lines and address lines, in addition to reverse diodes in series. CONSTITUTION:At intersections between address lines A1, A2... and selection lines S... arranged in a matrix, easy-to-break diode D3 and the (n)-number reverse diodes Dn... are provided in series and holding line A1 at higher level than line S makes diode D3 conductive by destruction to write logic ''0''. Similary, when line A1 is held at higher level than line S to allow the (m)-number reverse diodes Dm... and series diode D4 to conduct by destructon, logic ''1'' is written and when diodes D3 or D4 is not destroyed, logic ''2'' is written. For read operation, lines A1 and A2 are connected and forward biases are applied to diodes Dn... and Dm to read a voltage corresponding to writing operation appearing between lines A and S, so that ternary PROM of simple constitution can be obtained which operates stably.
JP13969478A 1978-11-13 1978-11-13 Ternary programmable read-only memory circuit Granted JPS5567997A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13969478A JPS5567997A (en) 1978-11-13 1978-11-13 Ternary programmable read-only memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13969478A JPS5567997A (en) 1978-11-13 1978-11-13 Ternary programmable read-only memory circuit

Publications (2)

Publication Number Publication Date
JPS5567997A true JPS5567997A (en) 1980-05-22
JPS6115520B2 JPS6115520B2 (en) 1986-04-24

Family

ID=15251232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13969478A Granted JPS5567997A (en) 1978-11-13 1978-11-13 Ternary programmable read-only memory circuit

Country Status (1)

Country Link
JP (1) JPS5567997A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441167A (en) * 1981-12-03 1984-04-03 Raytheon Company Reprogrammable read only memory
US5119330A (en) * 1989-03-31 1992-06-02 Oki Electric Industry Co, Ltd. Nonvolatile memory system for multiple value storing

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62267619A (en) * 1986-05-15 1987-11-20 Kanbayashi Seisakusho:Kk Flow rate measuring instrument
JPH01107112A (en) * 1987-10-20 1989-04-25 Aichi Tokei Denki Co Ltd water meter
JPH02133614U (en) * 1989-04-12 1990-11-06
JPH0341316A (en) * 1989-07-07 1991-02-21 Tokico Ltd Turbine-type flowmeter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441167A (en) * 1981-12-03 1984-04-03 Raytheon Company Reprogrammable read only memory
US5119330A (en) * 1989-03-31 1992-06-02 Oki Electric Industry Co, Ltd. Nonvolatile memory system for multiple value storing

Also Published As

Publication number Publication date
JPS6115520B2 (en) 1986-04-24

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