JPS5568061A - Scanning electronic microscope - Google Patents

Scanning electronic microscope

Info

Publication number
JPS5568061A
JPS5568061A JP14103378A JP14103378A JPS5568061A JP S5568061 A JPS5568061 A JP S5568061A JP 14103378 A JP14103378 A JP 14103378A JP 14103378 A JP14103378 A JP 14103378A JP S5568061 A JPS5568061 A JP S5568061A
Authority
JP
Japan
Prior art keywords
specimen
electron beam
irradiated
electronic microscope
scanning electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14103378A
Other languages
Japanese (ja)
Other versions
JPS5857862B2 (en
Inventor
Kimio Kanda
Minoru Shinohara
Tadashi Otaka
Minoru Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53141033A priority Critical patent/JPS5857862B2/en
Publication of JPS5568061A publication Critical patent/JPS5568061A/en
Publication of JPS5857862B2 publication Critical patent/JPS5857862B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE: To improve the X-ray analyzing performance by moving the focused electron beam across micro region on the surface of specimen including the stopping point thereby reducing the contamination at the position to be irradiated.
CONSTITUTION: The electron beam 20 is irradiated while focused on the surface of specimen 9. The amount of irradiated electron beam 20 is normally 10-11W10-10 ampere and the spot size of irradiated electron beam 20 on the surface of specimen 9 is normally 100W300 ampere. When scanning the irradiated electron beam 20 across micro region on the surface of specimen, the contamination of specimen in the analyzing region can be reduced or averaged.
COPYRIGHT: (C)1980,JPO&Japio
JP53141033A 1978-11-17 1978-11-17 scanning electron microscope Expired JPS5857862B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53141033A JPS5857862B2 (en) 1978-11-17 1978-11-17 scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53141033A JPS5857862B2 (en) 1978-11-17 1978-11-17 scanning electron microscope

Publications (2)

Publication Number Publication Date
JPS5568061A true JPS5568061A (en) 1980-05-22
JPS5857862B2 JPS5857862B2 (en) 1983-12-22

Family

ID=15282651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53141033A Expired JPS5857862B2 (en) 1978-11-17 1978-11-17 scanning electron microscope

Country Status (1)

Country Link
JP (1) JPS5857862B2 (en)

Also Published As

Publication number Publication date
JPS5857862B2 (en) 1983-12-22

Similar Documents

Publication Publication Date Title
JPS52151568A (en) Electron beam exposure apparatus
EP0373599A3 (en) Method of determining the position of electron beam irradiation and device used in such method
JPS5252562A (en) Electron beam scanning type sample image pick-up device
JPS51116671A (en) Scanning type electron microscope
JPS6431339A (en) Charged particle beam device
JPS53142876A (en) Development method of electron ray resist and elctron beam resist
JPS5664336A (en) Minute pattern forming method
JPS54114177A (en) Manufacture of semiconductor device
JPS5362978A (en) Electron microscope
JPS53120277A (en) Electron beam exposure device
JPS54145592A (en) X-ray analyzer
JPS53117463A (en) Position detection method
JPS52122462A (en) Electronic microscope
JPS55110908A (en) Measuring device
JPS52123163A (en) Reflection electron image observation unit for scanning type electroni c microscope
JPS5662683A (en) Electron beam processing device
SU1669327A1 (en) Method for recording point of incidence of electron beam onto semiconductor surface in vacuum
JPS5226154A (en) Scanning particles microscopes
JPS5315077A (en) Electron beam deflection controlling apparatus
JPS51120170A (en) Scanning type elestson microscope
JPS51138157A (en) Specimen holder of electron microscope
JPS5537719A (en) X-ray analyzer
JPS5254490A (en) Corpsucular beam analyzing apparatus
JPS52119184A (en) Electron beam exposing method
JPS5671589A (en) Charged particle beam processing device