JPS55680A - Detection switch - Google Patents

Detection switch

Info

Publication number
JPS55680A
JPS55680A JP2923879A JP2923879A JPS55680A JP S55680 A JPS55680 A JP S55680A JP 2923879 A JP2923879 A JP 2923879A JP 2923879 A JP2923879 A JP 2923879A JP S55680 A JPS55680 A JP S55680A
Authority
JP
Japan
Prior art keywords
resistance
diode
load
serial circuit
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2923879A
Other languages
English (en)
Inventor
Toshibumi Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP2923879A priority Critical patent/JPS55680A/ja
Publication of JPS55680A publication Critical patent/JPS55680A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)
JP2923879A 1979-03-12 1979-03-12 Detection switch Pending JPS55680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2923879A JPS55680A (en) 1979-03-12 1979-03-12 Detection switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2923879A JPS55680A (en) 1979-03-12 1979-03-12 Detection switch

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4308674A Division JPS5422819B2 (ja) 1974-04-16 1974-04-16

Publications (1)

Publication Number Publication Date
JPS55680A true JPS55680A (en) 1980-01-07

Family

ID=12270651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2923879A Pending JPS55680A (en) 1979-03-12 1979-03-12 Detection switch

Country Status (1)

Country Link
JP (1) JPS55680A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197920A (en) * 1981-05-29 1982-12-04 Matsushita Electric Works Ltd Signal transferring circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197920A (en) * 1981-05-29 1982-12-04 Matsushita Electric Works Ltd Signal transferring circuit

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