JPS55682A - Bias circuit of field effect transistor - Google Patents

Bias circuit of field effect transistor

Info

Publication number
JPS55682A
JPS55682A JP3888579A JP3888579A JPS55682A JP S55682 A JPS55682 A JP S55682A JP 3888579 A JP3888579 A JP 3888579A JP 3888579 A JP3888579 A JP 3888579A JP S55682 A JPS55682 A JP S55682A
Authority
JP
Japan
Prior art keywords
circuit
bias circuit
field effect
effect transistor
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3888579A
Other languages
Japanese (ja)
Other versions
JPS5645522B2 (en
Inventor
Katsuaki Tsurushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3888579A priority Critical patent/JPS55682A/en
Publication of JPS55682A publication Critical patent/JPS55682A/en
Publication of JPS5645522B2 publication Critical patent/JPS5645522B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain a bias circuit for the field effect transistor which features such triode characteristics that the DC bias drain current never change even with fluctuation of the active power voltage. CONSTITUTION:Fixed bias circuit 12 consists of bias circuit 12a and 12b which are symmetric to each other for pure complementary AB-class push-pull source follower type amplifier circuit 13 which uses field effect transistor Fa and Fb featuring the N- and P-channel type triode characteristics. With circuit 12, the signals given from output terminal t2 of amplifier circuit 11 are supplied in the same phase to each gate of Fa and Fb. In bias circuit 12a, output terminal t2 of circuit 11 of the driving step is connected to the anode of Zener diode D22, and the cathode is connected to the gate of Fb via resistance R4a as well as to power source +B2 via resistance R3a.
JP3888579A 1979-03-30 1979-03-30 Bias circuit of field effect transistor Granted JPS55682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3888579A JPS55682A (en) 1979-03-30 1979-03-30 Bias circuit of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3888579A JPS55682A (en) 1979-03-30 1979-03-30 Bias circuit of field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10912073A Division JPS5541049B2 (en) 1973-09-28 1973-09-28

Publications (2)

Publication Number Publication Date
JPS55682A true JPS55682A (en) 1980-01-07
JPS5645522B2 JPS5645522B2 (en) 1981-10-27

Family

ID=12537658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3888579A Granted JPS55682A (en) 1979-03-30 1979-03-30 Bias circuit of field effect transistor

Country Status (1)

Country Link
JP (1) JPS55682A (en)

Also Published As

Publication number Publication date
JPS5645522B2 (en) 1981-10-27

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