JPS5568655A - Manufacturing method of wiring - Google Patents

Manufacturing method of wiring

Info

Publication number
JPS5568655A
JPS5568655A JP14309678A JP14309678A JPS5568655A JP S5568655 A JPS5568655 A JP S5568655A JP 14309678 A JP14309678 A JP 14309678A JP 14309678 A JP14309678 A JP 14309678A JP S5568655 A JPS5568655 A JP S5568655A
Authority
JP
Japan
Prior art keywords
layer
wiring
flat surface
mask
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14309678A
Other languages
Japanese (ja)
Other versions
JPS5831731B2 (en
Inventor
Michio Ito
Makoto Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14309678A priority Critical patent/JPS5831731B2/en
Publication of JPS5568655A publication Critical patent/JPS5568655A/en
Publication of JPS5831731B2 publication Critical patent/JPS5831731B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a flat surface, by etching an electroconductive layer through a resist mask, covering the layer with an SiO film of the same thickness as the layer, and lifting off the mask.
CONSTITUTION: An aluminum layer 11 is provided on a substrate 1. The layer 11 is etched through a resist mask 12 to make an aluminum wiring layer 13. An SiO-layer 14 of the same thickness as the layer 13 is then evaporated in each opening of the layer 13. When the SiO-layer 14 on the mask is lifted off, a flat surface is produced. When a multilayer wiring is provided on the flat surface, the wiring becomes falt. The wiring does not snap becuase there is no step.
COPYRIGHT: (C)1980,JPO&Japio
JP14309678A 1978-11-20 1978-11-20 Wiring formation method Expired JPS5831731B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14309678A JPS5831731B2 (en) 1978-11-20 1978-11-20 Wiring formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14309678A JPS5831731B2 (en) 1978-11-20 1978-11-20 Wiring formation method

Publications (2)

Publication Number Publication Date
JPS5568655A true JPS5568655A (en) 1980-05-23
JPS5831731B2 JPS5831731B2 (en) 1983-07-08

Family

ID=15330809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14309678A Expired JPS5831731B2 (en) 1978-11-20 1978-11-20 Wiring formation method

Country Status (1)

Country Link
JP (1) JPS5831731B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176745A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of multilayer wiring
JPS6123344A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Manufacture of semiconductor integrated circuit
WO2011010236A1 (en) * 2009-07-21 2011-01-27 Philips Lumileds Lighting Company, Llc Reflective contact for a semiconductor light emitting device
JP2014218705A (en) * 2013-05-09 2014-11-20 日本放送協会 Vacuum suction method, vacuum treatment unit, and sublimation pump

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176745A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of multilayer wiring
JPS6123344A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Manufacture of semiconductor integrated circuit
WO2011010236A1 (en) * 2009-07-21 2011-01-27 Philips Lumileds Lighting Company, Llc Reflective contact for a semiconductor light emitting device
US8076682B2 (en) 2009-07-21 2011-12-13 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP2014218705A (en) * 2013-05-09 2014-11-20 日本放送協会 Vacuum suction method, vacuum treatment unit, and sublimation pump

Also Published As

Publication number Publication date
JPS5831731B2 (en) 1983-07-08

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