JPS556871A - Multilayer wiring type semiconductor device - Google Patents
Multilayer wiring type semiconductor deviceInfo
- Publication number
- JPS556871A JPS556871A JP7953978A JP7953978A JPS556871A JP S556871 A JPS556871 A JP S556871A JP 7953978 A JP7953978 A JP 7953978A JP 7953978 A JP7953978 A JP 7953978A JP S556871 A JPS556871 A JP S556871A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- insulating film
- layer insulating
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 1
- 229910018885 Pt—Au Inorganic materials 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910003086 Ti–Pt Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To improve the reliability of performance characteristics, by covering a wiring end exposing portion of a foundation metallic film in a laminated metallic film contacting with a layer insulating film and a photo-resist film hardened on a surface of the layer insulating film near the exposing portion.
CONSTITUTION: This device is provided with a silicon substrate 1, a silicon oxide or a silicon nitrising film or these combination insulating film 2, a diffusion element range 3, a lower region wiring Al film 5 in a shpae that contacts with a Pt-Si alloy region or an Al-Si alloy region 4 of an insulating film opening portion of the diffusion element portion and an Al2O3 film 6 between wiring. A main surface is equipped with a layer insulating film 7 such as a SiO2 film or a Si3N4 film, a foundation metallic film such as a Ti-Pt film 8 in a shape that contacts with a fixed opening portion of the layer insulating film 7 and an upper region wiring Ti-Pt-Au film obtained by wiring a laminated film such as a plated Au film 9.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7953978A JPS6053465B2 (en) | 1978-06-29 | 1978-06-29 | Multilayer wiring semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7953978A JPS6053465B2 (en) | 1978-06-29 | 1978-06-29 | Multilayer wiring semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS556871A true JPS556871A (en) | 1980-01-18 |
| JPS6053465B2 JPS6053465B2 (en) | 1985-11-26 |
Family
ID=13692791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7953978A Expired JPS6053465B2 (en) | 1978-06-29 | 1978-06-29 | Multilayer wiring semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053465B2 (en) |
-
1978
- 1978-06-29 JP JP7953978A patent/JPS6053465B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6053465B2 (en) | 1985-11-26 |
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