JPS5569257A - Low-temperature sputtering unit - Google Patents
Low-temperature sputtering unitInfo
- Publication number
- JPS5569257A JPS5569257A JP14068178A JP14068178A JPS5569257A JP S5569257 A JPS5569257 A JP S5569257A JP 14068178 A JP14068178 A JP 14068178A JP 14068178 A JP14068178 A JP 14068178A JP S5569257 A JPS5569257 A JP S5569257A
- Authority
- JP
- Japan
- Prior art keywords
- substrate product
- magnetic field
- low
- tank
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE: To form a uniform metal film on a substrate product having vertical portion such as recesses or holes, by attaching a magnetic field-producing material to the substrate product cradle of a low-temp. sputtering unit, and by generating a magnetic field of a strength not lower than that desired strength at the desired position of the substrate product.
CONSTITUTION: A substrate product 12 having many holes 12a is placed on a substrate product cradle 8, and the vacuum tank 1 is evacuated, then Ar gas is introduced from a bombe 3 into the vacuum tank 1 in order to keep the tank at a suitable vacuum. A voltage is applied across the target 6 and an anode 7 so as to produce discharge. In the region where the electric field and the magnetic field generated by a magnet 10 cross each other, the electrons ionized by the discharge are in magnetron and form plasma. The target metal sputtered by the Ar+ contained in the plasma advances nearly straight to the substrate product 12. Because a magnetic field is formed by a magnitic field generating material 11, the metal atoms diffract due to the effect of the magnetic field and form films on the hole sections 12a, which are hardly metallized essentially, to a thickness similar to that of the film formed on the other section.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5569257A true JPS5569257A (en) | 1980-05-24 |
| JPS6016515B2 JPS6016515B2 (en) | 1985-04-25 |
Family
ID=15274274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14068178A Expired JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016515B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58133376A (en) * | 1982-01-26 | 1983-08-09 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetron bias sputtering method and device |
| JPS59140375A (en) * | 1983-01-26 | 1984-08-11 | マテリアルズ・リサ−チ・コ−ポレイシヨン | Magnetron electrode for use in low pressure chamber of plasma treatment device |
| JP2005336506A (en) * | 2004-05-24 | 2005-12-08 | National Institute For Materials Science | Single power source sputtering apparatus comprising an anode with magnetic field control |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4641773B2 (en) * | 2004-09-27 | 2011-03-02 | 大日本除蟲菊株式会社 | Indoor dust mite repellent |
| CN103814153B (en) * | 2011-09-22 | 2015-11-25 | 学校法人芝浦工业大学 | Film forming method, film forming device, the treated object being formed with overlay film, mould and instrument |
-
1978
- 1978-11-15 JP JP14068178A patent/JPS6016515B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58133376A (en) * | 1982-01-26 | 1983-08-09 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetron bias sputtering method and device |
| JPS59140375A (en) * | 1983-01-26 | 1984-08-11 | マテリアルズ・リサ−チ・コ−ポレイシヨン | Magnetron electrode for use in low pressure chamber of plasma treatment device |
| JP2005336506A (en) * | 2004-05-24 | 2005-12-08 | National Institute For Materials Science | Single power source sputtering apparatus comprising an anode with magnetic field control |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6016515B2 (en) | 1985-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4094764A (en) | Device for cathodic sputtering at a high deposition rate | |
| CA2326202C (en) | Method and apparatus for deposition of biaxially textured coatings | |
| US4282083A (en) | Penning sputter source | |
| Howson et al. | The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin films | |
| HK67587A (en) | Method for pure ion plating using magnetic fields | |
| JPS5710329A (en) | Sputter vapor depositing device | |
| JP3345009B2 (en) | Method for ionizing material vapor produced by heating and apparatus for performing the method | |
| Chopra et al. | Duoplasmatron ion beam source for vacuum sputtering of thin films | |
| JPS5569257A (en) | Low-temperature sputtering unit | |
| US3336211A (en) | Reduction of oxides by ion bombardment | |
| Nyaiesh | The characteristics of a planar magnetron operated at a high power input | |
| JPS5534689A (en) | Sputtering device | |
| JP3685670B2 (en) | DC sputtering equipment | |
| JPS5489983A (en) | Device and method for vacuum deposition compound | |
| JPS5538919A (en) | Sputtering apparatus | |
| JPS58213875A (en) | Sputtering method | |
| GB2212520A (en) | Ion source | |
| JPS5743986A (en) | Film forming apparatus | |
| EP0790328A1 (en) | Thin film deposition | |
| JPS63213664A (en) | Ion plating device | |
| JPS584920Y2 (en) | Zinc oxide thin film production equipment | |
| KR0138905B1 (en) | Coating Method of Insulation Thin Film | |
| JPS5891168A (en) | Magnetron type sputtering device | |
| JPS5813622B2 (en) | Magnetron type sputtering equipment | |
| Rao et al. | Optimization studies on magnetic field geometry for planar magnetron sputtering targets |