JPS557017B1 - - Google Patents

Info

Publication number
JPS557017B1
JPS557017B1 JP8708071A JP8708071A JPS557017B1 JP S557017 B1 JPS557017 B1 JP S557017B1 JP 8708071 A JP8708071 A JP 8708071A JP 8708071 A JP8708071 A JP 8708071A JP S557017 B1 JPS557017 B1 JP S557017B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8708071A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS557017B1 publication Critical patent/JPS557017B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP8708071A 1970-11-02 1971-11-01 Pending JPS557017B1 (th)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8620570A 1970-11-02 1970-11-02

Publications (1)

Publication Number Publication Date
JPS557017B1 true JPS557017B1 (th) 1980-02-21

Family

ID=22196987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8708071A Pending JPS557017B1 (th) 1970-11-02 1971-11-01

Country Status (6)

Country Link
US (1) US3796597A (th)
JP (1) JPS557017B1 (th)
CA (1) CA957250A (th)
DE (1) DE2153862B2 (th)
FR (1) FR2113447A5 (th)
GB (1) GB1368315A (th)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115286A (en) * 1980-01-18 1981-09-10 Olivetti & Co Spa Cartridge for printing paper
JPS5879358U (ja) * 1981-11-26 1983-05-28 シャープ株式会社 プリンタ−付小型電子機器
JPS61120548U (th) * 1985-01-18 1986-07-30

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
US4147584A (en) * 1977-12-27 1979-04-03 Burroughs Corporation Method for providing low cost wafers for use as substrates for integrated circuits
US4330932A (en) * 1978-07-20 1982-05-25 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TRANS,MET,SOC,AME,#V245#M3=1969 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115286A (en) * 1980-01-18 1981-09-10 Olivetti & Co Spa Cartridge for printing paper
JPS5879358U (ja) * 1981-11-26 1983-05-28 シャープ株式会社 プリンタ−付小型電子機器
JPS61120548U (th) * 1985-01-18 1986-07-30

Also Published As

Publication number Publication date
FR2113447A5 (th) 1972-06-23
CA957250A (en) 1974-11-05
US3796597A (en) 1974-03-12
DE2153862B2 (de) 1980-03-06
DE2153862A1 (de) 1972-05-10
DE2153862C3 (th) 1980-10-23
GB1368315A (en) 1974-09-25

Similar Documents

Publication Publication Date Title
FR2091254A5 (th)
FR2078558A5 (th)
FI53596B (th)
FR2104131A5 (th)
FR2103023A5 (th)
FR2102181B1 (th)
FR2096568B1 (th)
FR2104095A5 (th)
FR2098378A1 (th)
FR2078262A5 (th)
FR2098691A5 (th)
FR2098293B3 (th)
CS151098B2 (th)
FR2102226B1 (th)
FR2049957A5 (th)
FR2096619A1 (th)
FR2105583A5 (th)
FR2077864B1 (th)
FR2079413A1 (th)
FR2093198A5 (th)
FR2079625A5 (th)
FR2099676B1 (th)
FR2098810A5 (th)
FR2101240A1 (th)
DE2039878A1 (th)