JPS5571027A - Continuous surface treatment apparatus - Google Patents

Continuous surface treatment apparatus

Info

Publication number
JPS5571027A
JPS5571027A JP14418078A JP14418078A JPS5571027A JP S5571027 A JPS5571027 A JP S5571027A JP 14418078 A JP14418078 A JP 14418078A JP 14418078 A JP14418078 A JP 14418078A JP S5571027 A JPS5571027 A JP S5571027A
Authority
JP
Japan
Prior art keywords
air
exhausting
feeding
electrode plate
treatment apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14418078A
Other languages
Japanese (ja)
Other versions
JPS6330778B2 (en
Inventor
Hideo Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14418078A priority Critical patent/JPS5571027A/en
Publication of JPS5571027A publication Critical patent/JPS5571027A/en
Publication of JPS6330778B2 publication Critical patent/JPS6330778B2/ja
Granted legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make a uniform and continuous treatment possible by alternately providing air feeding and exhausting systems on an upper electrode plate along the direction of transporting materials to be treated, in a surface-treatment apparatus for semiconductor wafers and the like.
CONSTITUTION: In a vacuum or low-pressure chamber in a vacuum container 1, materials to be treated such as wafers and the like are placed on a lower electrode plate 3, which also serves as a transport means, and are transported in the direction of an arrow. In an upper electrode 4, which is oppositely arranged with a specified distance being provided from the electrode plate 3, slit-shaped air feeding holes 5 and air exhausting holes 6 are alternately formed and are connected to an air-feeding system 9 and an air-exhausting system 10, through air-feeding ducts 7 and air- exhausting ducts 8, respectively. A high-frequency power supply 11 is connected to the electrodes 3 and 4 generate plasma discharge between both electrodes.
COPYRIGHT: (C)1980,JPO&Japio
JP14418078A 1978-11-24 1978-11-24 Continuous surface treatment apparatus Granted JPS5571027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14418078A JPS5571027A (en) 1978-11-24 1978-11-24 Continuous surface treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14418078A JPS5571027A (en) 1978-11-24 1978-11-24 Continuous surface treatment apparatus

Publications (2)

Publication Number Publication Date
JPS5571027A true JPS5571027A (en) 1980-05-28
JPS6330778B2 JPS6330778B2 (en) 1988-06-21

Family

ID=15356050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14418078A Granted JPS5571027A (en) 1978-11-24 1978-11-24 Continuous surface treatment apparatus

Country Status (1)

Country Link
JP (1) JPS5571027A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168922A (en) * 1985-01-17 1986-07-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma etching apparatus
JPS63127537A (en) * 1986-11-17 1988-05-31 Tokyo Electron Ltd Ashing device
JPS63157422A (en) * 1986-12-22 1988-06-30 Tokyo Electron Ltd Ashing method
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51106218U (en) * 1975-02-24 1976-08-25
JPS5220766A (en) * 1975-08-04 1977-02-16 Texas Instruments Inc Method of removing phtoresist layer and processing apparatus thereof
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5374372A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Plasma cvd device
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
JPS5512733A (en) * 1978-07-14 1980-01-29 Anelva Corp Dry process etching device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51106218U (en) * 1975-02-24 1976-08-25
JPS5220766A (en) * 1975-08-04 1977-02-16 Texas Instruments Inc Method of removing phtoresist layer and processing apparatus thereof
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5374372A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Plasma cvd device
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
JPS5512733A (en) * 1978-07-14 1980-01-29 Anelva Corp Dry process etching device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168922A (en) * 1985-01-17 1986-07-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma etching apparatus
JPS63127537A (en) * 1986-11-17 1988-05-31 Tokyo Electron Ltd Ashing device
JPS63157422A (en) * 1986-12-22 1988-06-30 Tokyo Electron Ltd Ashing method
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device

Also Published As

Publication number Publication date
JPS6330778B2 (en) 1988-06-21

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