JPS5575236A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number: JPS5575236A
Authority: JP; Japan
Prior art keywords: wafer; grooves; semiconductor; recess; urged
Prior art date: 1978-12-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP15032678A

Other languages

English (en)

Inventor

Masao Ishii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-12-04

Filing date

1978-12-04

Publication date

1980-06-06

1978-12-04 Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp

1978-12-04 Priority to JP15032678A priority Critical patent/JPS5575236A/ja

1980-06-06 Publication of JPS5575236A publication Critical patent/JPS5575236A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 5
238000004519 manufacturing process Methods 0.000 title 1
238000000034 method Methods 0.000 abstract 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
239000002390 adhesive tape Substances 0.000 abstract 1
230000007547 defect Effects 0.000 abstract 1
238000005530 etching Methods 0.000 abstract 1
229960002050 hydrofluoric acid Drugs 0.000 abstract 1
239000000203 mixture Substances 0.000 abstract 1
229910017604 nitric acid Inorganic materials 0.000 abstract 1
238000005498 polishing Methods 0.000 abstract 1
230000000717 retained effect Effects 0.000 abstract 1

Landscapes

Weting (AREA)
Dicing (AREA)

JP15032678A 1978-12-04 1978-12-04 Method of fabricating semiconductor device Pending JPS5575236A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP15032678A JPS5575236A (en)	1978-12-04	1978-12-04	Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP15032678A JPS5575236A (en)	1978-12-04	1978-12-04	Method of fabricating semiconductor device

Publications (1)

Publication Number	Publication Date
JPS5575236A true JPS5575236A (en)	1980-06-06

Family

ID=15494564

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP15032678A Pending JPS5575236A (en)	1978-12-04	1978-12-04	Method of fabricating semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS5575236A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6432635A (en) *	1987-07-22	1989-02-02	Alps Electric Co Ltd	Manufacture of thin-film element substrate
US4904610A (en) *	1988-01-27	1990-02-27	General Instrument Corporation	Wafer level process for fabricating passivated semiconductor devices

1978
- 1978-12-04 JP JP15032678A patent/JPS5575236A/ja active Pending

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6432635A (en) *	1987-07-22	1989-02-02	Alps Electric Co Ltd	Manufacture of thin-film element substrate
US4904610A (en) *	1988-01-27	1990-02-27	General Instrument Corporation	Wafer level process for fabricating passivated semiconductor devices

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