JPS5575272A - Solar battery - Google Patents

Solar battery

Info

Publication number
JPS5575272A
JPS5575272A JP14940078A JP14940078A JPS5575272A JP S5575272 A JPS5575272 A JP S5575272A JP 14940078 A JP14940078 A JP 14940078A JP 14940078 A JP14940078 A JP 14940078A JP S5575272 A JPS5575272 A JP S5575272A
Authority
JP
Japan
Prior art keywords
gaas
growing
substrate
silicon substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14940078A
Other languages
Japanese (ja)
Other versions
JPS5951755B2 (en
Inventor
Shigeru Mitsui
Takuji Shimae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53149400A priority Critical patent/JPS5951755B2/en
Publication of JPS5575272A publication Critical patent/JPS5575272A/en
Publication of JPS5951755B2 publication Critical patent/JPS5951755B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To greatly reduce the cost of a solar battery, by epitaxially growing a III∼ V groups compound semiconductor layer on a silicon substrate.
CONSTITUTION: A p+-GaAs layer 10', a p-GaAs layer 2' an n+-GaAs layer 3' and an n+-AlxGa1-xAs layer 4' are sequentially produced by epitaxial growing on a p+-silicon substrate 11. Molecular-beam epitaxial growing is one of methods for expitaxially growing GaAs crystal on the silicon substrate. In the molecular-beam epitaxial growing, the temperature of the substrate can be set at about 400°C, which is much lower than that (700∼800°C) of the substrate for epitaxially growing GaAs at liquid or gas phase. For this reason, single crystal of GaAs can be epitaxially grown on the silicon substrate. This results in greatly reducing the cost in comparison with epitaxial growth of such single crystal on a GaAs substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP53149400A 1978-11-30 1978-11-30 How to manufacture solar cells Expired JPS5951755B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53149400A JPS5951755B2 (en) 1978-11-30 1978-11-30 How to manufacture solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53149400A JPS5951755B2 (en) 1978-11-30 1978-11-30 How to manufacture solar cells

Publications (2)

Publication Number Publication Date
JPS5575272A true JPS5575272A (en) 1980-06-06
JPS5951755B2 JPS5951755B2 (en) 1984-12-15

Family

ID=15474296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53149400A Expired JPS5951755B2 (en) 1978-11-30 1978-11-30 How to manufacture solar cells

Country Status (1)

Country Link
JP (1) JPS5951755B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500410A (en) * 1984-04-27 1987-02-19 アドバンストエナジ−フアンド　リミテツド　パ−トナ−シツプ epitaxial composite

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500410A (en) * 1984-04-27 1987-02-19 アドバンストエナジ−フアンド　リミテツド　パ−トナ−シツプ epitaxial composite

Also Published As

Publication number Publication date
JPS5951755B2 (en) 1984-12-15

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