JPS5577162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5577162A
JPS5577162A JP15008778A JP15008778A JPS5577162A JP S5577162 A JPS5577162 A JP S5577162A JP 15008778 A JP15008778 A JP 15008778A JP 15008778 A JP15008778 A JP 15008778A JP S5577162 A JPS5577162 A JP S5577162A
Authority
JP
Japan
Prior art keywords
copper
carbon fiber
buried
pellet
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15008778A
Other languages
Japanese (ja)
Inventor
Shigeo Tsuruoka
Keiichi Kuniya
Hideo Arakawa
Masabumi Ohashi
Tsuneo Yoshinari
Takashi Namekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15008778A priority Critical patent/JPS5577162A/en
Publication of JPS5577162A publication Critical patent/JPS5577162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To reconcile a parallel direction thermal expantion coefficient with that of an Si pellet by making an electrode with the material wherein carbon fiber is buried in copper alloy containing metal easier to be oxidized than copper.
CONSTITUTION: Carbon fiber is buried in a copper alloy containing about 1W 15wt% of metal easier to be oxidized than copper such as Zr, Ti, Cr, Zn, Sb, Al, Si, Be. Said metal can be solid solved or deposited in copper. In this way, thin film oxide is produced on the surface of copper and carbon fiber to improve wetting produced on an interface with coated glass by a chemical combination through O2. When also carbon fiber is, for example, buried in parallel with a centrifugal pellet surface, a parallel direction thermal expansion coefficient can be reconciled with a pellet. Consequently, when a glass coated Si semiconductor device is formed using said electronic material, effective heat radiation can be provided without producing glass crack.
COPYRIGHT: (C)1980,JPO&Japio
JP15008778A 1978-12-06 1978-12-06 Semiconductor device Pending JPS5577162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15008778A JPS5577162A (en) 1978-12-06 1978-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15008778A JPS5577162A (en) 1978-12-06 1978-12-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5577162A true JPS5577162A (en) 1980-06-10

Family

ID=15489221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15008778A Pending JPS5577162A (en) 1978-12-06 1978-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577162A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128274A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128274A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Semiconductor device

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