JPS5577168A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5577168A
JPS5577168A JP15123178A JP15123178A JPS5577168A JP S5577168 A JPS5577168 A JP S5577168A JP 15123178 A JP15123178 A JP 15123178A JP 15123178 A JP15123178 A JP 15123178A JP S5577168 A JPS5577168 A JP S5577168A
Authority
JP
Japan
Prior art keywords
layer
transistor
vertical type
emitter
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15123178A
Other languages
Japanese (ja)
Inventor
Koichi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP15123178A priority Critical patent/JPS5577168A/en
Priority to GB7940998A priority patent/GB2043337B/en
Publication of JPS5577168A publication Critical patent/JPS5577168A/en
Priority to US06/332,854 priority patent/US4394625A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3066—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the collectors of complementary power transistors being connected to the output
    • H03F3/3067—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the collectors of complementary power transistors being connected to the output with asymmetrical driving of the end stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a low-frequency power amplifying circuit containing an inverted Darlington circuit, by making a prescribed combination of a vertical type pnp-transistor and an npn-transistor on the same semiconductor substrate. CONSTITUTION:2-Layer n-epitaxial layer is formed on a p-type substrate, and a p<+>-layer is isolated from a p-layer. A vertical type pnp-transistor 31 is formed in a 2-layer n-epitaxial layer on one side by providing a p-layer in an n-layer surrounded by the p<+>-layer. At the same time, an npn-transistor 32 is formed in a 2-layer n-epitaxial layer on the other side. By leading out an output terminal 36 with these transistors' collectors as the common and giving a power source voltage Vcc/2 to an emitter of a vertical type transistor 33, an emitter of the transistor 32 is grounded. Further, if in case of a 2-power source system, voltage of -Vcc is given to the emitter of the transistor 32. As a vertical type pnp-transistor 31 of this 2-layer epitaxial layer has a sufficiently large current amplification factor, it is possible to compose output step of power amplifying circuit without Darlington circuit, to integrate a low-frequency power amplifying circuit and to operate the device at low voltage.
JP15123178A 1978-12-06 1978-12-06 Semiconductor integrated circuit device Pending JPS5577168A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP15123178A JPS5577168A (en) 1978-12-06 1978-12-06 Semiconductor integrated circuit device
GB7940998A GB2043337B (en) 1978-12-06 1979-11-28 Semiconductor integrated circuit devices
US06/332,854 US4394625A (en) 1978-12-06 1981-12-21 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15123178A JPS5577168A (en) 1978-12-06 1978-12-06 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5577168A true JPS5577168A (en) 1980-06-10

Family

ID=15514100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15123178A Pending JPS5577168A (en) 1978-12-06 1978-12-06 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5577168A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731213A (en) * 1980-08-01 1982-02-19 Nec Corp Electric power amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731213A (en) * 1980-08-01 1982-02-19 Nec Corp Electric power amplifier

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