JPS5578524A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5578524A
JPS5578524A JP15288778A JP15288778A JPS5578524A JP S5578524 A JPS5578524 A JP S5578524A JP 15288778 A JP15288778 A JP 15288778A JP 15288778 A JP15288778 A JP 15288778A JP S5578524 A JPS5578524 A JP S5578524A
Authority
JP
Japan
Prior art keywords
substrate
silicon
gas
silicon carbide
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15288778A
Other languages
Japanese (ja)
Other versions
JPS6237527B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15288778A priority Critical patent/JPS5578524A/en
Publication of JPS5578524A publication Critical patent/JPS5578524A/en
Publication of JPS6237527B2 publication Critical patent/JPS6237527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To obtain a homogeneous filmy silicon carbide or silicon coating without involving a cluster of carbon or silicon by processing silicon carbide obtained at high temperature through vapor phase process or decompression vapor phase process particularly.
CONSTITUTION: A substrate 1 kept on a board 2 adjacently is sealed in a reaction vessel 3. The vessel 3 is arranged to excite, react to or heat a reactive gas and substrate according to high-frequency energy of a high-frequency heating furnace 4 and is provided with a heater 4 on the outside. Exhaustion is carried out from 6 through a valve 7 and a vacuum pump 8. The reactive gas arrives at an inlet 9, however, it is chemically activated, decomposed or made reactive by high-frequency inductive energy 10 at a position apart from the substrate. Namely, silicified gas and carbide gas are chemically activated or made reactive here, and then silicon carbide or silicon coating is formed on the substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
JP15288778A 1978-12-10 1978-12-10 Manufacture of semiconductor device Granted JPS5578524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Related Child Applications (8)

Application Number Title Priority Date Filing Date
JP5560881A Division JPS56153727A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device
JP5560781A Division JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP5560681A Division JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP57126046A Division JPS5825226A (en) 1982-07-19 1982-07-19 Plasma cvd unit
JP57126047A Division JPS5825227A (en) 1982-07-19 1982-07-19 Manufacture of semiconductor device
JP58048504A Division JPS5967625A (en) 1983-03-23 1983-03-23 Semiconductor
JP62065998A Division JPS6366923A (en) 1987-03-20 1987-03-20 Continuous type semiconductor film forming device
JP62065997A Division JPS6366922A (en) 1987-03-20 1987-03-20 Manufcture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5578524A true JPS5578524A (en) 1980-06-13
JPS6237527B2 JPS6237527B2 (en) 1987-08-13

Family

ID=15550286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Granted JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578524A (en)

Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5742331A (en) * 1980-08-26 1982-03-09 Canon Inc Manufacture for deposited film
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS57194521A (en) * 1981-05-25 1982-11-30 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5821817A (en) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> Apparatus for forming amorphous multiplayer thin film
JPS5850733A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass-production apparatus of thin film for solar cell
JPS5860537U (en) * 1981-10-21 1983-04-23 市光工業株式会社 Vehicle lights
JPS5870524A (en) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of depositing body material on base and system therefor
JPS5893322A (en) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for semiconductor device
JPS5893321A (en) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for semiconductor device
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS58190810A (en) * 1983-03-16 1983-11-07 Yoshihiro Hamakawa Manufacture of p type amorphous silicon carbide
JPS5916328A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS5916329A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS5941470A (en) * 1982-08-31 1984-03-07 Shimadzu Corp Multi-chamber type thin film fabricating apparatus
JPS5952835A (en) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd Plasma vapor reactor
JPS5958820A (en) * 1982-09-28 1984-04-04 Matsushita Electronics Corp Equipment for vapor phase epitaxial growth
JPS59100516A (en) * 1982-11-12 1984-06-09 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Apparatus and assembly for producing photocell element
JPS59167013A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS59167012A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS6010681A (en) * 1983-06-30 1985-01-19 Canon Inc Device for manufacturing photoelectric converting member
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
JPS6123760A (en) * 1984-07-09 1986-02-01 Canon Inc Manufacturing method of electrophotographic photoreceptor
JPS62112318A (en) * 1985-11-12 1987-05-23 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS62118520A (en) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd Film formation by electronic cyclotron resonance
JPS62167885A (en) * 1986-11-19 1987-07-24 Semiconductor Energy Lab Co Ltd Production of composite body having carbon film
JPH01157520A (en) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction
JPH02283078A (en) * 1989-05-15 1990-11-20 Semiconductor Energy Lab Co Ltd Light emitting element
JPH0562919A (en) * 1980-10-24 1993-03-12 Semiconductor Energy Lab Co Ltd Semiamorphous semiconductor material
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05251356A (en) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd Formation method of film
JPH05304096A (en) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05343714A (en) * 1991-12-24 1993-12-24 Kanegafuchi Chem Ind Co Ltd Method of manufacturing amorphous silicon photoelectric device
JPH0697473A (en) * 1992-05-06 1994-04-08 Kanegafuchi Chem Ind Co Ltd Method of manufacturing amorphous silicon photoelectric device
JPH06101047A (en) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd Carbon coating film containing silicon and its production
JPH0769613A (en) * 1992-08-25 1995-03-14 Semiconductor Energy Lab Co Ltd Formation of material composed mainly of carbon
JPH0774117A (en) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0774118A (en) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JP2010040971A (en) * 2008-08-08 2010-02-18 Chikao Kimura Method of forming thin film semiconductor layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1978 *
PHILOS MAG=1977 *

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS6122622A (en) * 1980-05-19 1986-01-31 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method and device for producing photovoltaic power panel
JPS5742331A (en) * 1980-08-26 1982-03-09 Canon Inc Manufacture for deposited film
JPH0562919A (en) * 1980-10-24 1993-03-12 Semiconductor Energy Lab Co Ltd Semiamorphous semiconductor material
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS57194521A (en) * 1981-05-25 1982-11-30 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5821817A (en) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> Apparatus for forming amorphous multiplayer thin film
JPS5850733A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass-production apparatus of thin film for solar cell
JPS5870524A (en) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of depositing body material on base and system therefor
JPS5860537U (en) * 1981-10-21 1983-04-23 市光工業株式会社 Vehicle lights
JPS5893322A (en) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for semiconductor device
JPS5893321A (en) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for semiconductor device
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS5916328A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS5916329A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5941470A (en) * 1982-08-31 1984-03-07 Shimadzu Corp Multi-chamber type thin film fabricating apparatus
JPS5952835A (en) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd Plasma vapor reactor
JPS5958820A (en) * 1982-09-28 1984-04-04 Matsushita Electronics Corp Equipment for vapor phase epitaxial growth
JPS59100516A (en) * 1982-11-12 1984-06-09 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Apparatus and assembly for producing photocell element
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPS59167012A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS59167013A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS58190810A (en) * 1983-03-16 1983-11-07 Yoshihiro Hamakawa Manufacture of p type amorphous silicon carbide
JPS6010681A (en) * 1983-06-30 1985-01-19 Canon Inc Device for manufacturing photoelectric converting member
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPS6123760A (en) * 1984-07-09 1986-02-01 Canon Inc Manufacturing method of electrophotographic photoreceptor
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
JPS62112318A (en) * 1985-11-12 1987-05-23 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS62118520A (en) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd Film formation by electronic cyclotron resonance
JPS62167885A (en) * 1986-11-19 1987-07-24 Semiconductor Energy Lab Co Ltd Production of composite body having carbon film
JPH01157520A (en) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction
JPH02283078A (en) * 1989-05-15 1990-11-20 Semiconductor Energy Lab Co Ltd Light emitting element
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05304096A (en) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05251356A (en) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd Formation method of film
JPH05343714A (en) * 1991-12-24 1993-12-24 Kanegafuchi Chem Ind Co Ltd Method of manufacturing amorphous silicon photoelectric device
JPH0697473A (en) * 1992-05-06 1994-04-08 Kanegafuchi Chem Ind Co Ltd Method of manufacturing amorphous silicon photoelectric device
JPH0769613A (en) * 1992-08-25 1995-03-14 Semiconductor Energy Lab Co Ltd Formation of material composed mainly of carbon
JPH06101047A (en) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd Carbon coating film containing silicon and its production
JPH0774118A (en) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0774117A (en) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JP2010040971A (en) * 2008-08-08 2010-02-18 Chikao Kimura Method of forming thin film semiconductor layer

Also Published As

Publication number Publication date
JPS6237527B2 (en) 1987-08-13

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