JPS5578565A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5578565A
JPS5578565A JP15280978A JP15280978A JPS5578565A JP S5578565 A JPS5578565 A JP S5578565A JP 15280978 A JP15280978 A JP 15280978A JP 15280978 A JP15280978 A JP 15280978A JP S5578565 A JPS5578565 A JP S5578565A
Authority
JP
Japan
Prior art keywords
regions
substrate
grooves
semiconductor layer
semiconductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15280978A
Other languages
Japanese (ja)
Other versions
JPS6136712B2 (en
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15280978A priority Critical patent/JPS5578565A/en
Publication of JPS5578565A publication Critical patent/JPS5578565A/en
Publication of JPS6136712B2 publication Critical patent/JPS6136712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make alignment of individual portions easy and to readily manufacture highly integrated memories by utilizing complete or incomplete V grooves used for gates or isolation. CONSTITUTION:An inversely-conductive semiconductor layer 2 is formed on a conductive-type semiconductor substrate 1. Regions 3a-3d whose conductivity is the same as that of the substrate 1 are partially formed on the surface of the semiconductor layer 2. Complete V grooves 4a-4c and incomplete V grooves 4d- 4e, which are surrounded by regions 3a-3d, and whose bottoms reach the inside of the substrate 1, are further formed. Insulating gates 6a, 6b, 6c and 6d are provided on said grooves. The first FET is formed by the semiconductor layer 2, the substrate 1, and the semiconductor layers 2a-2d on which regions 3a-3d are formed; and the second FET is formed by the substrate 1, the semiconductor layers 2a-2d, and the regions 3a-3d. The semiconductor layers 2a-2d which are isolated from the surrounding portion, on which the regions 3a-3d are formed, are made to be an electric-charge storage region.
JP15280978A 1978-12-09 1978-12-09 Semiconductor memory device Granted JPS5578565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15280978A JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15280978A JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5578565A true JPS5578565A (en) 1980-06-13
JPS6136712B2 JPS6136712B2 (en) 1986-08-20

Family

ID=15548619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15280978A Granted JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5578565A (en)

Also Published As

Publication number Publication date
JPS6136712B2 (en) 1986-08-20

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