JPS5580314A - Manufacture of silicon semiconductor device - Google Patents
Manufacture of silicon semiconductor deviceInfo
- Publication number
- JPS5580314A JPS5580314A JP15307378A JP15307378A JPS5580314A JP S5580314 A JPS5580314 A JP S5580314A JP 15307378 A JP15307378 A JP 15307378A JP 15307378 A JP15307378 A JP 15307378A JP S5580314 A JPS5580314 A JP S5580314A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- films
- deposited
- diffused
- yielded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To prevent abnormal diffusion and to avoid deterioration of an SiO2 film which is provided on an Si substrate, by selectively depositing an Al diffused layer on the surface of the Si substrate, diffusing Al into the substrate by heat treatment, in a diffused atmosphere comtaining oxygen and free chlorine atoms.
CONSTITUTION: Photoresist films 2 with a specified pattern are deposited on upper and bottom surfaces of an n-type Si substrate 1, and etching is made, thereby a plurality of recesses 3 are formed in the substrate 1. Then, Al is deposited on the upper and lower surfaces of the substrate 1 by a vacuum evaporation method employing Al wire whose purity is 99.9995%, with the surfaces of the films 4 and the bottoms of the recesses 3 being separated. The films 2 and the films 4 which are deposited on the films 2, are removed. Then, Al in the films 4 is diffused by heat treatment in a mixed gas comprising 10% of oxygen including 1% of hydrogen- chloride gas and 90% of nitrogen, thereby a p-type separating regions 5 piercing the substrate 1 is formed. AT the same time, a diffusing-source remnants 6 are yielded on the surfaces of the regions 5, and SiO2 films 7 are yielded on the upper and bottom surfaces of the substrate. In this method, deterioration in film quality due to crystallization is not caused in the films 7.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53153073A JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53153073A JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5580314A true JPS5580314A (en) | 1980-06-17 |
| JPS5919461B2 JPS5919461B2 (en) | 1984-05-07 |
Family
ID=15554380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53153073A Expired JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919461B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542020A (en) * | 1984-08-17 | 1985-09-17 | E. R. Squibb & Sons, Inc. | Long-lasting adhesive antifungal suppositories |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057776A (en) * | 1973-09-17 | 1975-05-20 |
-
1978
- 1978-12-13 JP JP53153073A patent/JPS5919461B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057776A (en) * | 1973-09-17 | 1975-05-20 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542020A (en) * | 1984-08-17 | 1985-09-17 | E. R. Squibb & Sons, Inc. | Long-lasting adhesive antifungal suppositories |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5919461B2 (en) | 1984-05-07 |
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