JPS558060A - Thyristor - Google Patents

Abstract

PURPOSE: For decreasing regullar directional voltage, cutting down turn-off time, and raising voltage resistance, to provide a conductive range selectively on either of the high specific resistance oppositely-conductive ranges formed on the both sides of a low specific resistance conductive range.

CONSTITUTION: P-type layers 21 and 22 are provided on the both sides of an N⁺- type semiconductor substrate 20, P-N junctions 23 and 24 are made between said P-type layers 21 and 22 on one hand and a substrate 20, an N-type range 25 is formed in said layer 21, and a P-N junction 25 is made between said range 25 and layer 22. Next, the ends of said layer 21 and substrate 20 and of said layer 22 and substrate 20 are shaped in -forms 27 and 28, which are covered with protective glass films 29 and 30. Thereafter, a plugging 3-electrode thyristor is made by fitting an anode 31 on the reverse side of said layer 21, a cathode 32 at a range 25, and a gate electrode 33 on the exposed surface of said layer 22. Thereby, regular directional voltage, can be decreased, turn-off time can be cut down, and voltage resistance can be increased since P-N junctions are bevelled positively.

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