JPS5582434A - Method of epitaxial growth at liquid phase - Google Patents

Method of epitaxial growth at liquid phase

Info

Publication number
JPS5582434A
JPS5582434A JP15614278A JP15614278A JPS5582434A JP S5582434 A JPS5582434 A JP S5582434A JP 15614278 A JP15614278 A JP 15614278A JP 15614278 A JP15614278 A JP 15614278A JP S5582434 A JPS5582434 A JP S5582434A
Authority
JP
Japan
Prior art keywords
furnace
liquid phase
reflection plate
melting temperature
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15614278A
Other languages
Japanese (ja)
Other versions
JPS6157696B2 (en
Inventor
Toshio Sakata
Tomoyuki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15614278A priority Critical patent/JPS5582434A/en
Publication of JPS5582434A publication Critical patent/JPS5582434A/en
Publication of JPS6157696B2 publication Critical patent/JPS6157696B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To accurately maintain a melting temperature at a prescribed level, by fitting a crystal substrate hanger of a dipping-type liquid phase epitaxial growing unit with a heat reflection plate of diameter slightly less than the inside diameter of a heating furnace.
CONSTITUTION: A heat reflection plate 8 made of platinum and having a diameter slightly less than the inside diameter of a heating furnace 2 is attached to a jig 5 for hanging a crystal substrate 6 in a dipping-type liquid phase epitaxial growing unit. Another heat reflection plate 9 made of platinum is provided inside the heating furnace 2 along its total circumference. As a result, even if the heat reflexibility of the crystal substrate 6 is large, the temperature distribution in the furnace is hard to change when the substrate is inserted into the furnace. Therefore, the fluctuation in a melting temperature is reduced. The melting temperature can be accurately maintained at a command when the temperature in the furnace is controlled through a thermocouple 7 and a heating coil 1. This results in reducing the scattering in the properties of grown crystal pieces.
COPYRIGHT: (C)1980,JPO&Japio
JP15614278A 1978-12-15 1978-12-15 Method of epitaxial growth at liquid phase Granted JPS5582434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15614278A JPS5582434A (en) 1978-12-15 1978-12-15 Method of epitaxial growth at liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15614278A JPS5582434A (en) 1978-12-15 1978-12-15 Method of epitaxial growth at liquid phase

Publications (2)

Publication Number Publication Date
JPS5582434A true JPS5582434A (en) 1980-06-21
JPS6157696B2 JPS6157696B2 (en) 1986-12-08

Family

ID=15621233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15614278A Granted JPS5582434A (en) 1978-12-15 1978-12-15 Method of epitaxial growth at liquid phase

Country Status (1)

Country Link
JP (1) JPS5582434A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235792A (en) * 1984-05-04 1985-11-22 Hitachi Cable Ltd liquid phase growth equipment
JPS62197393A (en) * 1986-02-24 1987-09-01 Hitachi Cable Ltd Liquid phase epitaxial growth method
EP0676492A1 (en) * 1994-04-07 1995-10-11 Murata Manufacturing Co., Ltd. Apparatus for production of single crystal oxide films by liquid-phase epitaxy
JP2003095630A (en) * 2001-09-26 2003-04-03 Sharp Corp Silicon sheet and solar cell containing it
CN103985657A (en) * 2014-05-19 2014-08-13 上海先进半导体制造股份有限公司 Barrel type furnace and method for manufacturing semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919767A (en) * 1972-06-14 1974-02-21
JPS5166498A (en) * 1974-12-04 1976-06-09 Fujitsu Ltd Ekisoepitakisharuseichosochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919767A (en) * 1972-06-14 1974-02-21
JPS5166498A (en) * 1974-12-04 1976-06-09 Fujitsu Ltd Ekisoepitakisharuseichosochi

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235792A (en) * 1984-05-04 1985-11-22 Hitachi Cable Ltd liquid phase growth equipment
JPS62197393A (en) * 1986-02-24 1987-09-01 Hitachi Cable Ltd Liquid phase epitaxial growth method
EP0676492A1 (en) * 1994-04-07 1995-10-11 Murata Manufacturing Co., Ltd. Apparatus for production of single crystal oxide films by liquid-phase epitaxy
JP2003095630A (en) * 2001-09-26 2003-04-03 Sharp Corp Silicon sheet and solar cell containing it
WO2003029143A1 (en) * 2001-09-26 2003-04-10 Sharp Kabushiki Kaisha Silicon sheet and solar cell including the same
CN103985657A (en) * 2014-05-19 2014-08-13 上海先进半导体制造股份有限公司 Barrel type furnace and method for manufacturing semiconductor

Also Published As

Publication number Publication date
JPS6157696B2 (en) 1986-12-08

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