JPS5585091A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5585091A
JPS5585091A JP16554078A JP16554078A JPS5585091A JP S5585091 A JPS5585091 A JP S5585091A JP 16554078 A JP16554078 A JP 16554078A JP 16554078 A JP16554078 A JP 16554078A JP S5585091 A JPS5585091 A JP S5585091A
Authority
JP
Japan
Prior art keywords
layer
type
gaas layer
diffusion
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16554078A
Other languages
Japanese (ja)
Inventor
Giichi Ikuwa
Hisao Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16554078A priority Critical patent/JPS5585091A/en
Publication of JPS5585091A publication Critical patent/JPS5585091A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To make almost uniform the horizontal diffusing distance of p-type impurity in GaAlAs layer under a separated region by eliminating surface GaAs layer prior to diffusion.
CONSTITUTION: Wafer 1 having n-type GaAlAs layer 2, n-type GaAs layer 3, n-type CaAlAs layer 4 and n-type GaAs layer 5 obtained by the epitaxial method, is prepared. Then a separate area 7 is formed on n-type GaAs layer 5 using photosensitive resist film 12. Following this procedure, silicon nitride film 11 is formed, p-type impurity is diffused and p-type impurity diffusion region 6 is constituted. When the diffusion is completed, a horizontal sealing is formed on GaAs layer 3 which is an active layer. However, a horizontal sealing is not formed on GaAs layer 5, so that an effective constitution is obtained as insulation substrate TJS laser. Next, silicon nitride layer 11 is eliminated and an electrode is formed, completing an insulation substrate TJS laser.
COPYRIGHT: (C)1980,JPO&Japio
JP16554078A 1978-12-21 1978-12-21 Manufacture of semiconductor device Pending JPS5585091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16554078A JPS5585091A (en) 1978-12-21 1978-12-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16554078A JPS5585091A (en) 1978-12-21 1978-12-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5585091A true JPS5585091A (en) 1980-06-26

Family

ID=15814318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16554078A Pending JPS5585091A (en) 1978-12-21 1978-12-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585091A (en)

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