JPS5586136A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5586136A
JPS5586136A JP16162778A JP16162778A JPS5586136A JP S5586136 A JPS5586136 A JP S5586136A JP 16162778 A JP16162778 A JP 16162778A JP 16162778 A JP16162778 A JP 16162778A JP S5586136 A JPS5586136 A JP S5586136A
Authority
JP
Japan
Prior art keywords
film
peeled
substrates
plate
discharges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16162778A
Other languages
Japanese (ja)
Inventor
Akinori Tanizaki
Noboru Ando
Kunimichi Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16162778A priority Critical patent/JPS5586136A/en
Publication of JPS5586136A publication Critical patent/JPS5586136A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prevent damaging IC elements on semiconductor substrates by scattering static electricity over a wide area which is generated when peeling off plastic films from the substrates and preventing the generation of discharges.
CONSTITUTION: Substrates 1 on which IC elements have been formed are sandwhiched between two pressure sensitive adhesive plastic films 2 and 2' and adhered, and then separated into chips. These processed matters are placed on a conductive base 3, and on the film 2 to be peeled, a thin plate 4 of electric conductivity below 1014 ohm.cm is placed and the film 2 is peeled off along with the plate 4. By this method, the film 2' contacts the conductive base 3, the peeled film 2 contacts the conductive plate 4 and generated static electricity is scattered, therefore, discharges do not occur and IC element connections or insulating films are not damaged.
COPYRIGHT: (C)1980,JPO&Japio
JP16162778A 1978-12-23 1978-12-23 Preparation of semiconductor device Pending JPS5586136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162778A JPS5586136A (en) 1978-12-23 1978-12-23 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162778A JPS5586136A (en) 1978-12-23 1978-12-23 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5586136A true JPS5586136A (en) 1980-06-28

Family

ID=15738770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162778A Pending JPS5586136A (en) 1978-12-23 1978-12-23 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5586136A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219939A (en) * 1983-05-27 1984-12-11 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS61214587A (en) * 1985-03-20 1986-09-24 Toshiba Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913081U (en) * 1972-05-08 1974-02-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913081U (en) * 1972-05-08 1974-02-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219939A (en) * 1983-05-27 1984-12-11 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS61214587A (en) * 1985-03-20 1986-09-24 Toshiba Corp Manufacture of semiconductor device

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