JPS5588332A - Method of mask alignment - Google Patents

Method of mask alignment

Info

Publication number
JPS5588332A
JPS5588332A JP16317578A JP16317578A JPS5588332A JP S5588332 A JPS5588332 A JP S5588332A JP 16317578 A JP16317578 A JP 16317578A JP 16317578 A JP16317578 A JP 16317578A JP S5588332 A JPS5588332 A JP S5588332A
Authority
JP
Japan
Prior art keywords
substrate
measuring apparatus
mask
substrate base
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16317578A
Other languages
Japanese (ja)
Inventor
Masahiro Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16317578A priority Critical patent/JPS5588332A/en
Publication of JPS5588332A publication Critical patent/JPS5588332A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To set accurately a gap between a substrate and a mask without touching by a method wherein a distance between the mask and the substrate is detected on a gap measuring apparatus provided on substrate side, and the detected distance is transferred to a gap measuring apparatus provided on mask side.
CONSTITUTION: A plural gap measuring apparatus 7 is enclosed in a substrate base 6. Next, a reference plate 3 is placed on the substrate base 6, the distance is measured and then the gap measuring apparatus 7 is zeroed. Then, the reference plate 3 is demounted, a mask 1 is brought near to the substrate 6, and a gap between a reference plane 8 and the substrate base 6 is measured. The measured value is set as an initial value of a gap measuring apparatus 10 on mask side. After that, a maks holder 9 is kept apart from the substrate base 6. Next, a wafer with a resist applied thereon is placed on the substrate base 6. Then, the mask holder 9 is moved to come near to the substrate base 6, a gap to the substrate base 6 is measured on the gap measuring apparatus 10 until a given value is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP16317578A 1978-12-26 1978-12-26 Method of mask alignment Pending JPS5588332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16317578A JPS5588332A (en) 1978-12-26 1978-12-26 Method of mask alignment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16317578A JPS5588332A (en) 1978-12-26 1978-12-26 Method of mask alignment

Publications (1)

Publication Number Publication Date
JPS5588332A true JPS5588332A (en) 1980-07-04

Family

ID=15768661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16317578A Pending JPS5588332A (en) 1978-12-26 1978-12-26 Method of mask alignment

Country Status (1)

Country Link
JP (1) JPS5588332A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US7535549B2 (en) 2004-06-03 2009-05-19 Board Of Regents, University Of Texas System System and method for improvement of alignment and overlay for microlithography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US7535549B2 (en) 2004-06-03 2009-05-19 Board Of Regents, University Of Texas System System and method for improvement of alignment and overlay for microlithography

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