JPS5589983A - Static memory cell - Google Patents

Static memory cell

Info

Publication number
JPS5589983A
JPS5589983A JP16254478A JP16254478A JPS5589983A JP S5589983 A JPS5589983 A JP S5589983A JP 16254478 A JP16254478 A JP 16254478A JP 16254478 A JP16254478 A JP 16254478A JP S5589983 A JPS5589983 A JP S5589983A
Authority
JP
Japan
Prior art keywords
memory cell
point
selection
gnd
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16254478A
Other languages
Japanese (ja)
Inventor
Keizo Aoyama
Eiji Noguchi
Takahiko Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16254478A priority Critical patent/JPS5589983A/en
Publication of JPS5589983A publication Critical patent/JPS5589983A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To enable low power consumption for static memory, by connecting the power save circuit being the impedant enabling to flow a small current to the degree that the memory state can be kept at non-selection of memory cell. CONSTITUTION:MOS, FETQ7, Q8 shortening drain and gate are connected in series between the point A and GND as resistors and MOS,FETQ0 inserting them are connected in parallel with Q7, Q8 to constitute power saving circuit PD. Thus, at chip non-selection when the chip selection signal CS is at L level, transistor Q9 is OFF and the potential at point A is greater than GND by about 2 Vth for voltage drop's share of Q7, Q8, and the difference voltage of VCC-potential at point A, VA, is fed to the memory cell MEM. Since the memory cell current is limited to a small current in response to this and mutual conductance gm of transistors Q7, Q8, the power consumption can be saved.
JP16254478A 1978-12-28 1978-12-28 Static memory cell Pending JPS5589983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16254478A JPS5589983A (en) 1978-12-28 1978-12-28 Static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16254478A JPS5589983A (en) 1978-12-28 1978-12-28 Static memory cell

Publications (1)

Publication Number Publication Date
JPS5589983A true JPS5589983A (en) 1980-07-08

Family

ID=15756610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16254478A Pending JPS5589983A (en) 1978-12-28 1978-12-28 Static memory cell

Country Status (1)

Country Link
JP (1) JPS5589983A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134985A (en) * 1984-12-04 1986-06-23 Toshiba Corp Circuit for controlling memory cell power source of static type random access memory
JPS62102498A (en) * 1985-10-28 1987-05-12 Toshiba Corp Memory cell power source control circuit for static-type random access memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134985A (en) * 1984-12-04 1986-06-23 Toshiba Corp Circuit for controlling memory cell power source of static type random access memory
JPS62102498A (en) * 1985-10-28 1987-05-12 Toshiba Corp Memory cell power source control circuit for static-type random access memory

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