JPS5590228A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5590228A
JPS5590228A JP15917878A JP15917878A JPS5590228A JP S5590228 A JPS5590228 A JP S5590228A JP 15917878 A JP15917878 A JP 15917878A JP 15917878 A JP15917878 A JP 15917878A JP S5590228 A JPS5590228 A JP S5590228A
Authority
JP
Japan
Prior art keywords
electrode
work
microwave
dry etching
degeneration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15917878A
Other languages
Japanese (ja)
Other versions
JPS5653853B2 (en
Inventor
Makoto Asakawa
Seitaro Matsuo
Munenori Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15917878A priority Critical patent/JPS5590228A/en
Publication of JPS5590228A publication Critical patent/JPS5590228A/en
Publication of JPS5653853B2 publication Critical patent/JPS5653853B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the temperature rise at resist and to prevent thermal deterioration of the mask such as deformation or degeneration by accelerating thermal transmission between the work and the sample platform in dry etching by making use of the microwave glow discharge.
CONSTITUTION: The insulated electrode 2 is provided in the vacuum chamber 13, and the opposit electrode 4 kept at the grounding potential is mounted facing the electrode 2. The surface of the electrode 2 is covered by the conducting rubber sheet 10, and the work 5 is placed almost at the center of the conductive film 3 over the sheet 10. Furthermore, the etching target 11 to adjust gas component is set on the work 5. Then, the electrode 2 is connected to the microwave power source 1 through the microwave matching circuit 9 and to the DC power source 7 through the microwave breaking circuit 8. The thermal deterioration such as deformation or degeneration of the resist mask of the work, cooled at the cooler 12, due to dry etching can be completely prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP15917878A 1978-12-26 1978-12-26 Dry etching device Granted JPS5590228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15917878A JPS5590228A (en) 1978-12-26 1978-12-26 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15917878A JPS5590228A (en) 1978-12-26 1978-12-26 Dry etching device

Publications (2)

Publication Number Publication Date
JPS5590228A true JPS5590228A (en) 1980-07-08
JPS5653853B2 JPS5653853B2 (en) 1981-12-22

Family

ID=15687993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15917878A Granted JPS5590228A (en) 1978-12-26 1978-12-26 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5590228A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187025A (en) * 1984-03-07 1985-09-24 Ulvac Corp Self-bias voltage controller in plasma discharge device
JPS6273632A (en) * 1985-09-27 1987-04-04 Anelva Corp Plasma processing equipment
JPH027520A (en) * 1988-06-27 1990-01-11 Fujitsu Ltd Dry-etching equipment
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
US5290993A (en) * 1991-05-31 1994-03-01 Hitachi, Ltd. Microwave plasma processing device
JPH08306675A (en) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd Plasma etching
US5699223A (en) * 1994-04-27 1997-12-16 Anelva Corporation Method of removing substrate and apparatus for controlling applied voltage
US6046425A (en) * 1991-05-31 2000-04-04 Hitachi, Ltd. Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber
US7029594B2 (en) 2002-02-15 2006-04-18 Hitachi High-Technologies Corporation Plasma processing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194194A (en) * 2008-02-15 2009-08-27 Sumitomo Precision Prod Co Ltd Plasma processing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187025A (en) * 1984-03-07 1985-09-24 Ulvac Corp Self-bias voltage controller in plasma discharge device
JPS6273632A (en) * 1985-09-27 1987-04-04 Anelva Corp Plasma processing equipment
JPH027520A (en) * 1988-06-27 1990-01-11 Fujitsu Ltd Dry-etching equipment
US5290993A (en) * 1991-05-31 1994-03-01 Hitachi, Ltd. Microwave plasma processing device
US6046425A (en) * 1991-05-31 2000-04-04 Hitachi, Ltd. Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
US5699223A (en) * 1994-04-27 1997-12-16 Anelva Corporation Method of removing substrate and apparatus for controlling applied voltage
JPH08306675A (en) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd Plasma etching
US7029594B2 (en) 2002-02-15 2006-04-18 Hitachi High-Technologies Corporation Plasma processing method

Also Published As

Publication number Publication date
JPS5653853B2 (en) 1981-12-22

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