JPS5590498A - Single crystal producing device - Google Patents

Single crystal producing device

Info

Publication number
JPS5590498A
JPS5590498A JP16376878A JP16376878A JPS5590498A JP S5590498 A JPS5590498 A JP S5590498A JP 16376878 A JP16376878 A JP 16376878A JP 16376878 A JP16376878 A JP 16376878A JP S5590498 A JPS5590498 A JP S5590498A
Authority
JP
Japan
Prior art keywords
crystal
focus
rod
raw
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16376878A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16376878A priority Critical patent/JPS5590498A/en
Publication of JPS5590498A publication Critical patent/JPS5590498A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a crack- and bubble-free, complete single crystal by locating plural infrared lamps in a line parallel to the line connecting seed and raw material rod and passing through one focus of spheroid mirror.
CONSTITUTION: In a silica tube 5 in which atmosphere and pressure are controllable, a raw sintered rod 3 and seed crystal 5 are placed so that melted zone 2 is located at one focus of the spheroid mirror 1. Plural infrared lamps 7 are located on the line 6 passing the other focus, and parallel to the line connecting the raw rod 3 and the melting zone 2. This arrangement enables to heat the sintered rod 3 area other than melted zone 2, seed crystal 4, and crystal grown on it, and therefore can provide a complete crystal free from thermal strain, cracks, and bubbles.
COPYRIGHT: (C)1980,JPO&Japio
JP16376878A 1978-12-28 1978-12-28 Single crystal producing device Pending JPS5590498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16376878A JPS5590498A (en) 1978-12-28 1978-12-28 Single crystal producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16376878A JPS5590498A (en) 1978-12-28 1978-12-28 Single crystal producing device

Publications (1)

Publication Number Publication Date
JPS5590498A true JPS5590498A (en) 1980-07-09

Family

ID=15780338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16376878A Pending JPS5590498A (en) 1978-12-28 1978-12-28 Single crystal producing device

Country Status (1)

Country Link
JP (1) JPS5590498A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2246461A4 (en) * 2007-12-25 2011-05-25 Crystal Systems Corp FLOATING ZONE FUSION APPARATUS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2246461A4 (en) * 2007-12-25 2011-05-25 Crystal Systems Corp FLOATING ZONE FUSION APPARATUS

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