JPS5591183A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591183A
JPS5591183A JP16478178A JP16478178A JPS5591183A JP S5591183 A JPS5591183 A JP S5591183A JP 16478178 A JP16478178 A JP 16478178A JP 16478178 A JP16478178 A JP 16478178A JP S5591183 A JPS5591183 A JP S5591183A
Authority
JP
Japan
Prior art keywords
film
layer
substrate
etched
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16478178A
Other languages
Japanese (ja)
Inventor
Yasuo Nemoto
Kiyobumi Oota
Shigeru Fukuda
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16478178A priority Critical patent/JPS5591183A/en
Publication of JPS5591183A publication Critical patent/JPS5591183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To provide a GaAs Schottky gate FET having preferable reproducibility by utilizing an insulating film as a spacer and as a mask and etching the film.
CONSTITUTION: An n-type GaAs operating layer 2 and an n+-type GaAs layer 3 are sequentially superimposed on a semi-insulating substrate 1, and photo-etched to form a mesa type. Then, Au-Ge source and drain electrodes 6 and 7 are formed on the substrate and heat treated in N2 atmosphere to be thus alloyed. Then, the substrate thus treated is coated with CVDSiO2 film 11, opening for gate electrode is perforated at a resist 5, and the films 11, 3 and 2 are etched. At this time series resistance is measured by utilizing the electrodes 6, 7 to thereby control the etching. Then, an aluminum layer 9 is entirely deposited, and unnecessary aluminum film 8 and the resist 5 are removed therefrom. This configuration does not overhang the layer 2 to form the device with good reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
JP16478178A 1978-12-28 1978-12-28 Manufacture of semiconductor device Pending JPS5591183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16478178A JPS5591183A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16478178A JPS5591183A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591183A true JPS5591183A (en) 1980-07-10

Family

ID=15799818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16478178A Pending JPS5591183A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591183A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151979A (en) * 1984-08-22 1986-03-14 Fujitsu Ltd Manufacture of semiconductor device
US5536971A (en) * 1992-10-28 1996-07-16 Matsushita Electronics Corporation Semiconductor device having a hollow around a gate electrode and a method for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151979A (en) * 1984-08-22 1986-03-14 Fujitsu Ltd Manufacture of semiconductor device
US5536971A (en) * 1992-10-28 1996-07-16 Matsushita Electronics Corporation Semiconductor device having a hollow around a gate electrode and a method for producing the same
US5559046A (en) * 1992-10-28 1996-09-24 Matsushita Electronics Corporation Semiconductor device having a hollow around a gate electrode and a method for producing the same

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