JPS5591833A - Method of forming submicron pattern - Google Patents

Method of forming submicron pattern

Info

Publication number
JPS5591833A
JPS5591833A JP16581778A JP16581778A JPS5591833A JP S5591833 A JPS5591833 A JP S5591833A JP 16581778 A JP16581778 A JP 16581778A JP 16581778 A JP16581778 A JP 16581778A JP S5591833 A JPS5591833 A JP S5591833A
Authority
JP
Japan
Prior art keywords
window
film
insulating film
forming
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16581778A
Other languages
Japanese (ja)
Inventor
Toshio Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16581778A priority Critical patent/JPS5591833A/en
Publication of JPS5591833A publication Critical patent/JPS5591833A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To stabilize the formation of submicron pattern, by forming a window of a width by combining a photolithography, a side etching and a lift together.
CONSTITUTION: By allowing an n-type GaAs semiconductor layer 22 to grow epitaxially, and covering it with a double-layered ohmic contact electrode and patterning it, a source electrode 23 and a drain electrode 23' are formed. By forming a silicon dioxide insulating film 24, patterning thus formed insulating film 24 using usual photo-lithography technique and conducting side-etching of the section to become the window, a photoresist film 26 is left as it is. When a silicon dioxide film 25 is formed and dipped in acetone, the insulating film 25 is lift off and a window W becomes formed. An aluminum film is formed on an entire surface and patterned. It is possible, in this manner, to form an FET gate electrode 27 of submicron order.
COPYRIGHT: (C)1980,JPO&Japio
JP16581778A 1978-12-30 1978-12-30 Method of forming submicron pattern Pending JPS5591833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581778A JPS5591833A (en) 1978-12-30 1978-12-30 Method of forming submicron pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581778A JPS5591833A (en) 1978-12-30 1978-12-30 Method of forming submicron pattern

Publications (1)

Publication Number Publication Date
JPS5591833A true JPS5591833A (en) 1980-07-11

Family

ID=15819550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581778A Pending JPS5591833A (en) 1978-12-30 1978-12-30 Method of forming submicron pattern

Country Status (1)

Country Link
JP (1) JPS5591833A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133682A (en) * 1980-12-24 1982-08-18 Philips Nv Method of producing field effect transistor
JPS5927542A (en) * 1982-08-06 1984-02-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS5961074A (en) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133682A (en) * 1980-12-24 1982-08-18 Philips Nv Method of producing field effect transistor
JPS5927542A (en) * 1982-08-06 1984-02-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS5961074A (en) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing field effect transistor

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