JPS5591894A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS5591894A
JPS5591894A JP16580778A JP16580778A JPS5591894A JP S5591894 A JPS5591894 A JP S5591894A JP 16580778 A JP16580778 A JP 16580778A JP 16580778 A JP16580778 A JP 16580778A JP S5591894 A JPS5591894 A JP S5591894A
Authority
JP
Japan
Prior art keywords
clad
active layer
light emission
layer
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16580778A
Other languages
Japanese (ja)
Inventor
Kiyoshi Hanamitsu
Hiroshi Ishikawa
Nobuyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16580778A priority Critical patent/JPS5591894A/en
Publication of JPS5591894A publication Critical patent/JPS5591894A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To provide a semiconductor light emission device capable of performing a stable laser oscillation within the light emission region, wherein three-layered symmetric slab structure for propagation mode is formed for the light-emitting region, while, for the radiation mode region, three-layered asymmetric slab structure for radiation mode is formed.
CONSTITUTION: Clad layers 2 and 4 placed on both sides of active layer 3 on substrate 1 have a larger forbidden band width and a smaller refractive index than active layer 3. No.1 clad part 4A of width W in clad layer 4 is made of a material having the same refractive index as clad layer 2. No.2 clad part 4B is made of a material whose refractive index is different from that of No.1 clad part 4A. Let the refractive indexes of active layer 3, clad layer 2, and No.1 and No.2 clad parts 4A and 4B be represented by n1, n2, n2, n4, then the relation n1>n4.n2 holds. By adjusting the thickness d of active layer 3 and the value of x in the material Ga1-xAlxAs constituting clad parts 4A, 4B, the propagation is cut off.
COPYRIGHT: (C)1980,JPO&Japio
JP16580778A 1978-12-30 1978-12-30 Semiconductor light emission device Pending JPS5591894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16580778A JPS5591894A (en) 1978-12-30 1978-12-30 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16580778A JPS5591894A (en) 1978-12-30 1978-12-30 Semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS5591894A true JPS5591894A (en) 1980-07-11

Family

ID=15819360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16580778A Pending JPS5591894A (en) 1978-12-30 1978-12-30 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS5591894A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456998A (en) * 1980-06-02 1984-06-26 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456998A (en) * 1980-06-02 1984-06-26 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor laser

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