JPS5593644A - Method of yielding ion using ion source device - Google Patents

Method of yielding ion using ion source device

Info

Publication number
JPS5593644A
JPS5593644A JP109179A JP109179A JPS5593644A JP S5593644 A JPS5593644 A JP S5593644A JP 109179 A JP109179 A JP 109179A JP 109179 A JP109179 A JP 109179A JP S5593644 A JPS5593644 A JP S5593644A
Authority
JP
Japan
Prior art keywords
ion
ion source
plasma
alternate
source device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP109179A
Other languages
Japanese (ja)
Inventor
Hiroki Kuwano
Kazutoshi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP109179A priority Critical patent/JPS5593644A/en
Publication of JPS5593644A publication Critical patent/JPS5593644A/en
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE: To economically and simply manufacture an ion source discharging power source and improve the ion transmissivity by using alternate discharge for producing the plasma of the ion source device.
CONSTITUTION: By introducing gas or solid steam into the inside of an ion source, maintain the inside in fixed gas pressure, applying alternate voltage between the hollow cathode 1 and the anode 2 using the alternate current power supply 14, and producing alternate discharge, plasma is formed. The permanent magnet 4 lengthens the free flight of an electron and accelerates the ionization of gas or solid steam. Ions are led from the plasma using the lead-out electrode 5 and arrive at the target 6.
COPYRIGHT: (C)1980,JPO&Japio
JP109179A 1979-01-08 1979-01-08 Method of yielding ion using ion source device Pending JPS5593644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP109179A JPS5593644A (en) 1979-01-08 1979-01-08 Method of yielding ion using ion source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP109179A JPS5593644A (en) 1979-01-08 1979-01-08 Method of yielding ion using ion source device

Publications (1)

Publication Number Publication Date
JPS5593644A true JPS5593644A (en) 1980-07-16

Family

ID=11491822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP109179A Pending JPS5593644A (en) 1979-01-08 1979-01-08 Method of yielding ion using ion source device

Country Status (1)

Country Link
JP (1) JPS5593644A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629930A (en) * 1982-07-30 1986-12-16 Hitachi, Ltd. Plasma ion source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629930A (en) * 1982-07-30 1986-12-16 Hitachi, Ltd. Plasma ion source

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