JPS5595367A - Method of fabricating mos transistor - Google Patents

Method of fabricating mos transistor

Info

Publication number
JPS5595367A
JPS5595367A JP15628579A JP15628579A JPS5595367A JP S5595367 A JPS5595367 A JP S5595367A JP 15628579 A JP15628579 A JP 15628579A JP 15628579 A JP15628579 A JP 15628579A JP S5595367 A JPS5595367 A JP S5595367A
Authority
JP
Japan
Prior art keywords
mos transistor
fabricating mos
fabricating
transistor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15628579A
Other languages
English (en)
Inventor
Poeru Shiizu Robaato
Rii Ruusu Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS5595367A publication Critical patent/JPS5595367A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP15628579A 1973-01-15 1979-11-30 Method of fabricating mos transistor Pending JPS5595367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32367273A 1973-01-15 1973-01-15

Publications (1)

Publication Number Publication Date
JPS5595367A true JPS5595367A (en) 1980-07-19

Family

ID=23260226

Family Applications (3)

Application Number Title Priority Date Filing Date
JP715574A Pending JPS49110280A (ja) 1973-01-15 1974-01-16
JP15628679A Granted JPS5595368A (en) 1973-01-15 1979-11-30 Method of fabricating mos transistor
JP15628579A Pending JPS5595367A (en) 1973-01-15 1979-11-30 Method of fabricating mos transistor

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP715574A Pending JPS49110280A (ja) 1973-01-15 1974-01-16
JP15628679A Granted JPS5595368A (en) 1973-01-15 1979-11-30 Method of fabricating mos transistor

Country Status (6)

Country Link
JP (3) JPS49110280A (ja)
DD (1) DD110386A5 (ja)
HK (1) HK6580A (ja)
HU (1) HU171264B (ja)
IT (1) IT999786B (ja)
PL (1) PL94622B1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171677A (en) * 1974-12-18 1976-06-21 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic
JPS5353275A (en) * 1976-10-26 1978-05-15 Seiko Epson Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures

Also Published As

Publication number Publication date
IT999786B (it) 1976-03-10
HK6580A (en) 1980-03-07
JPS5549426B2 (ja) 1980-12-11
DD110386A5 (ja) 1974-12-12
PL94622B1 (pl) 1977-08-31
HU171264B (hu) 1977-12-28
JPS5595368A (en) 1980-07-19
JPS49110280A (ja) 1974-10-21

Similar Documents

Publication Publication Date Title
CA1001771A (en) Method of mos transistor manufacture and resulting structure
JPS51135382A (en) Mos transistor
CA1024266A (en) Deep depletion insulated gate field effect transistors
HK28081A (en) Process for fabricating insulated gate field effect transistor structure
CA928867A (en) Method of making complementary field-effect transistors by single step diffusion
AU465819B2 (en) Planar silicon gate mos process
JPS5635427A (en) Method of manufacturing semiconductor device
CA1000872A (en) Method of manufacturing of junction field effect transistor
CA995370A (en) Method of making a planar graded channel mos transistor
ZA741608B (en) Method of forming carrier-gels
CA1012658A (en) Manufacture of an insulated gate field effect transistor
KR780000084B1 (en) Method of fabricating a planar avalanche transistor
CA1005175A (en) Method for the production of integrated circuits with complementary channel field effect transistors
HK27981A (en) Process for fabricating complementary insulated gate field efect transistor structure and the structure fabricated by the process
JPS5595368A (en) Method of fabricating mos transistor
CA991317A (en) Method for the production of field effect transistors by the application of selective gettering
JPS5484566A (en) Method of manufacturing novel steroids
JPS5488779A (en) Method of fabricating complementary mos transistor
JPS5488780A (en) Method of fabricating complementary mos transistor
JPS5488778A (en) Method of fabricating complementary mos transistor
JPS54111288A (en) Method of fabricating mos transistor
AU482826B2 (en) Method of mos transistor manufacture and resulting structure
CA1008186A (en) Method of manufacture of mos transistor with gate connected to source or drain
JPS54158177A (en) Method of fabricating complementary mos transistor
AU4355972A (en) Method of manufacturing afield effect transistor