JPS5595384A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5595384A
JPS5595384A JP177679A JP177679A JPS5595384A JP S5595384 A JPS5595384 A JP S5595384A JP 177679 A JP177679 A JP 177679A JP 177679 A JP177679 A JP 177679A JP S5595384 A JPS5595384 A JP S5595384A
Authority
JP
Japan
Prior art keywords
light
output
temperature
container
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP177679A
Other languages
Japanese (ja)
Other versions
JPS59140B2 (en
Inventor
Tsuneo Urisu
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54001776A priority Critical patent/JPS59140B2/en
Publication of JPS5595384A publication Critical patent/JPS5595384A/en
Publication of JPS59140B2 publication Critical patent/JPS59140B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize the light source, by a method wherein a part of the output light emitted from a semiconductor laser is detected by a light detector via an interference filter, and based on this result, a feedback signal is obtained, and the temperature of the laser is controlled by a temperature control circuit. CONSTITUTION:Semiconductor laser 1 is housed in container 2, which is designed to control temperature. Interference filter 4, which is to become a frequency discriminator, is provided on the side of the light path of L2, of the output lights L1 and L2 emitted from here. Next, light detector element 5 is placed on the side of the light path light L3 emitted from here. This output is impressed in feedback signal generator circuit 6. Its output signal S is sent to temperature control circuit 3, and the temperature of container 2 is controlled by its output. When the frequency of the output light of the laser is deviated from the peak frequency of the transmission characteristics, signal S is produced, and by controlling the temperature of container 2, the peak frequency is restored. By this, the device can be made compact, suitable for application to the light heterodyne communication system.
JP54001776A 1979-01-13 1979-01-13 semiconductor laser equipment Expired JPS59140B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54001776A JPS59140B2 (en) 1979-01-13 1979-01-13 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54001776A JPS59140B2 (en) 1979-01-13 1979-01-13 semiconductor laser equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10578583A Division JPS5951583A (en) 1983-06-15 1983-06-15 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5595384A true JPS5595384A (en) 1980-07-19
JPS59140B2 JPS59140B2 (en) 1984-01-05

Family

ID=11510969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54001776A Expired JPS59140B2 (en) 1979-01-13 1979-01-13 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS59140B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864083A (en) * 1981-10-14 1983-04-16 Nippon Telegr & Teleph Corp <Ntt> Frequency stabilized semiconductor laser
WO1984000857A1 (en) * 1982-08-23 1984-03-01 Western Electric Co Spectrally stabilized laser
JPS60117695A (en) * 1983-11-29 1985-06-25 Sharp Corp Semiconductor laser light source device
JPS63500973A (en) * 1985-09-16 1988-04-07 ブリティシュ・テレコミュニケ−ションズ・パブリック・リミテッド・カンパニ Frequency stabilization method and device
JPH0495449U (en) * 1991-01-18 1992-08-19
US5200967A (en) * 1990-09-20 1993-04-06 Fujitsu Limited Optical frequency deviation measure and control device for laser light

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838987A (en) * 1971-09-20 1973-06-08
JPS5362992A (en) * 1976-11-17 1978-06-05 Fujitsu Ltd Oscillation wavelength stabilization method of semiconductor laser
JPS5366192A (en) * 1976-11-25 1978-06-13 Fujitsu Ltd Oscillation wavelength stabilization method of semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838987A (en) * 1971-09-20 1973-06-08
JPS5362992A (en) * 1976-11-17 1978-06-05 Fujitsu Ltd Oscillation wavelength stabilization method of semiconductor laser
JPS5366192A (en) * 1976-11-25 1978-06-13 Fujitsu Ltd Oscillation wavelength stabilization method of semiconductor laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864083A (en) * 1981-10-14 1983-04-16 Nippon Telegr & Teleph Corp <Ntt> Frequency stabilized semiconductor laser
WO1984000857A1 (en) * 1982-08-23 1984-03-01 Western Electric Co Spectrally stabilized laser
US4450565A (en) * 1982-08-23 1984-05-22 Bell Telephone Laboratories, Incorporated Spectrally stabilized laser
JPS60117695A (en) * 1983-11-29 1985-06-25 Sharp Corp Semiconductor laser light source device
JPS63500973A (en) * 1985-09-16 1988-04-07 ブリティシュ・テレコミュニケ−ションズ・パブリック・リミテッド・カンパニ Frequency stabilization method and device
US5200967A (en) * 1990-09-20 1993-04-06 Fujitsu Limited Optical frequency deviation measure and control device for laser light
JPH0495449U (en) * 1991-01-18 1992-08-19

Also Published As

Publication number Publication date
JPS59140B2 (en) 1984-01-05

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