JPS5596672A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5596672A JPS5596672A JP513479A JP513479A JPS5596672A JP S5596672 A JPS5596672 A JP S5596672A JP 513479 A JP513479 A JP 513479A JP 513479 A JP513479 A JP 513479A JP S5596672 A JPS5596672 A JP S5596672A
- Authority
- JP
- Japan
- Prior art keywords
- source
- shapes
- region
- triangular
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
Landscapes
- Bipolar Transistors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To flow large current through small area in a semiconductor device by collecting a number of triangular flat shapes each formed with a plurality of source and drain regions in one conductivity region when forming the source and drain regions. CONSTITUTION:A number of reverse conductivity source and drain regions are diffused on one conductivity semiconductor substrate to thereby form a MOS transistor or the like. At this time the fundamental configuration of the source region 1 and the drain region are formed in triangular shape, and adjacently contacted each other through a gate region 3. A number of such triangular shapes are arranged regularly. When the same occupying area is formed at the triangular shapes thus formed, their channel width can be lengthened, and drain current may also be increased through the shapes to thereby increase the output of the transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP513479A JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP513479A JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5596672A true JPS5596672A (en) | 1980-07-23 |
Family
ID=11602831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP513479A Pending JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596672A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59135652U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
| JPS59135651U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
| JPS6012742A (en) * | 1983-07-01 | 1985-01-23 | Toshiba Corp | Semiconductor device |
| US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
| US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
-
1979
- 1979-01-19 JP JP513479A patent/JPS5596672A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59135652U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
| JPS59135651U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
| JPS6012742A (en) * | 1983-07-01 | 1985-01-23 | Toshiba Corp | Semiconductor device |
| US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
| US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
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