JPS5598867A - Protecting device - Google Patents

Protecting device

Info

Publication number
JPS5598867A
JPS5598867A JP590779A JP590779A JPS5598867A JP S5598867 A JPS5598867 A JP S5598867A JP 590779 A JP590779 A JP 590779A JP 590779 A JP590779 A JP 590779A JP S5598867 A JPS5598867 A JP S5598867A
Authority
JP
Japan
Prior art keywords
short
oxide film
voltage
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP590779A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Toshio Ichiyama
Hideyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP590779A priority Critical patent/JPS5598867A/en
Publication of JPS5598867A publication Critical patent/JPS5598867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an input protecting device by utilizing the threshold voltage of a short-channel MOSFET for clamping voltage. CONSTITUTION:The interval L between the source 116 and the drain 102 of a MOSFET 119 having a field oxide film 118 as a gate oxide film is set in the range for allowing a short-channel effect. Thus, the thicker the thickness of the gate oxide film is, the more the short-channel effect becomes to lower the threshold voltage. When the interval between the source and the drain is likewise selected suitably, the clamping voltage can be set arbitrarily lower than the gate insulating withstand voltage so as to protect the input gate.
JP590779A 1979-01-19 1979-01-19 Protecting device Pending JPS5598867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP590779A JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP590779A JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Publications (1)

Publication Number Publication Date
JPS5598867A true JPS5598867A (en) 1980-07-28

Family

ID=11623963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP590779A Pending JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Country Status (1)

Country Link
JP (1) JPS5598867A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153472A (en) * 1981-03-17 1982-09-22 Toshiba Corp Manufacture of semiconductor device
JPS57153473A (en) * 1981-03-17 1982-09-22 Toshiba Corp Semiconductor device with input and output protective circuit and its manufacturing method
JPH02262374A (en) * 1989-02-16 1990-10-25 Advanced Micro Devices Inc electrostatic protection system
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
US5349227A (en) * 1991-10-25 1994-09-20 Nec Corporation Semiconductor input protective device against external surge voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153472A (en) * 1981-03-17 1982-09-22 Toshiba Corp Manufacture of semiconductor device
JPS57153473A (en) * 1981-03-17 1982-09-22 Toshiba Corp Semiconductor device with input and output protective circuit and its manufacturing method
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
JPH02262374A (en) * 1989-02-16 1990-10-25 Advanced Micro Devices Inc electrostatic protection system
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
US5349227A (en) * 1991-10-25 1994-09-20 Nec Corporation Semiconductor input protective device against external surge voltage

Similar Documents

Publication Publication Date Title
JPS5368581A (en) Semiconductor device
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5598867A (en) Protecting device
JPS5376678A (en) Semiconductor device
JPS52117586A (en) Semiconductor device
JPS52103974A (en) Semicondcutor integrated circuit device
JPS5439578A (en) Field effect semiconductor device of isolation gate type
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS52117587A (en) Insulating gate type field effect semiconductor device
JPS52128080A (en) Junction-type field effect transistor
JPS5366179A (en) Semiconductor device
JPS5771179A (en) Input protective circuit device
JPS5718364A (en) Mis field-effect transistor
JPS5423478A (en) Semiconductor device of field effect type
JPS5371573A (en) Field effect transistor of isolating gate type
JPS538080A (en) Insulated gate type field effect transistor
JPS5353980A (en) Semiconductor device
JPS5435684A (en) Junction type field effect transistor
JPS51142278A (en) Insulated-gate type fet
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS53116079A (en) Transistor and its manufacture
JPS55133572A (en) Mos analog switch
JPS53120159A (en) Voltage clamp circuit
JPS5376769A (en) Simiconductor device
JPS5693368A (en) Mis transistor device