JPS5599735A - Testing method for foreign material on wafer - Google Patents
Testing method for foreign material on waferInfo
- Publication number
- JPS5599735A JPS5599735A JP714579A JP714579A JPS5599735A JP S5599735 A JPS5599735 A JP S5599735A JP 714579 A JP714579 A JP 714579A JP 714579 A JP714579 A JP 714579A JP S5599735 A JPS5599735 A JP S5599735A
- Authority
- JP
- Japan
- Prior art keywords
- polarized laser
- polarized
- laser
- wafer
- foreign material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
PURPOSE: To detect P polarized laser contained in reflected light for recognizing foreign materials, by irradiating S polarized laser from slantly upside of the wafer.
CONSTITUTION: Because at the time of irradiation of X direction S polarized laser, S+P polarized laser is reflected from foreign material 3, it is converged by object lense 33 and from reflected light through translucent mirror 34, S polarized laser is cut by S polarized-laser-cut-filter 35 and thus P polarized laser component 27 is obtained and is detected by photoelectric converting element 37. On the other hand, with respect to Y direction, S polarized component which is obtained by cutting of P polarized laser is detected and, then, existence of foreign materials is recognized from the sum of the both detected values.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714579A JPS5948540B2 (en) | 1979-01-26 | 1979-01-26 | Foreign matter inspection method on wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714579A JPS5948540B2 (en) | 1979-01-26 | 1979-01-26 | Foreign matter inspection method on wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5599735A true JPS5599735A (en) | 1980-07-30 |
| JPS5948540B2 JPS5948540B2 (en) | 1984-11-27 |
Family
ID=11657894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP714579A Expired JPS5948540B2 (en) | 1979-01-26 | 1979-01-26 | Foreign matter inspection method on wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5948540B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128834A (en) * | 1981-02-04 | 1982-08-10 | Nippon Kogaku Kk <Nikon> | Inspecting apparatus of foreign substance |
| JPS62261044A (en) * | 1986-05-06 | 1987-11-13 | Hitachi Electronics Eng Co Ltd | Foreign matter inspector |
| JPS63296348A (en) * | 1987-05-28 | 1988-12-02 | Hitachi Electronics Eng Co Ltd | Detector of wafer foreign matter |
-
1979
- 1979-01-26 JP JP714579A patent/JPS5948540B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128834A (en) * | 1981-02-04 | 1982-08-10 | Nippon Kogaku Kk <Nikon> | Inspecting apparatus of foreign substance |
| JPS62261044A (en) * | 1986-05-06 | 1987-11-13 | Hitachi Electronics Eng Co Ltd | Foreign matter inspector |
| JPS63296348A (en) * | 1987-05-28 | 1988-12-02 | Hitachi Electronics Eng Co Ltd | Detector of wafer foreign matter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5948540B2 (en) | 1984-11-27 |
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