JPS56100461A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS56100461A
JPS56100461A JP384180A JP384180A JPS56100461A JP S56100461 A JPS56100461 A JP S56100461A JP 384180 A JP384180 A JP 384180A JP 384180 A JP384180 A JP 384180A JP S56100461 A JPS56100461 A JP S56100461A
Authority
JP
Japan
Prior art keywords
region
type
layer
collector
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP384180A
Other languages
Japanese (ja)
Inventor
Hirohiko Hasegawa
Shigeo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP384180A priority Critical patent/JPS56100461A/en
Publication of JPS56100461A publication Critical patent/JPS56100461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain IC having large capability of supplying current to the outside and functioning as an inverter circuit by forming a bipolar transistor and IGFET on the same semiconductor substrate. CONSTITUTION:An N<+> type region 14 serving for the collector of the bipolar transistor Q1 is formed diffusely on the P type Si substrate and on the whole surface including the region 14 an N type layer 2 is made to grow epitaxially. Next, the layer 2 is separated into an island-shaped part, including the region 14, by an insulation layer 6 reaching the substrate 1, and in the end part of the island-shaped layer 2 an N<+> type region 15 for leading out the collector reaching the region 14 is formed. After that, within a collector region 4 forred of the layer 2 the P type base region 7 of the transistor Q1 is formed diffusely and within this region an N<+> type emitter region 8 is provided. Then, adjacently to the region 8 and within the region 7, an N<+> type source region 9 constituting an IGFET element M1 and a drain region 10 are formed diffusely, and, being positioned between them, a gate electrode 13 is fitted through the intermediary of a gate insulation film 11. Moreover, an N<+> type region 16 connecting the regions 10 and 15 and a P<+> type base lead-out region 17 contacting with the region 9 are provided.
JP384180A 1980-01-17 1980-01-17 Semiconductor ic device Pending JPS56100461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP384180A JPS56100461A (en) 1980-01-17 1980-01-17 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP384180A JPS56100461A (en) 1980-01-17 1980-01-17 Semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS56100461A true JPS56100461A (en) 1981-08-12

Family

ID=11568400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP384180A Pending JPS56100461A (en) 1980-01-17 1980-01-17 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS56100461A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (en) * 1982-04-01 1983-12-09 株式会社東芝 Bipolar transistor device with controller
JPS5939060A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor integrated circuit device
JPS60136989A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Write circuit for semiconductor memory device
JPS61121354A (en) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device
JPS61121353A (en) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> Composite type semiconductor device
JPH01123458A (en) * 1987-10-06 1989-05-16 Motorola Inc Means for combining complementary bipolar and complementary MOS and manufacturing method thereof
US5001366A (en) * 1982-07-12 1991-03-19 Hitachi, Ltd. Gate circuit of combined field-effect and bipolar transistors
JPH05145023A (en) * 1991-11-22 1993-06-11 Mitsubishi Electric Corp Semiconductor device
US5600268A (en) * 1982-07-12 1997-02-04 Hitachi, Ltd. Gate circuit of combined field-effect and bipolar transistors

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (en) * 1982-04-01 1983-12-09 株式会社東芝 Bipolar transistor device with controller
US5001366A (en) * 1982-07-12 1991-03-19 Hitachi, Ltd. Gate circuit of combined field-effect and bipolar transistors
US5600268A (en) * 1982-07-12 1997-02-04 Hitachi, Ltd. Gate circuit of combined field-effect and bipolar transistors
JPS5939060A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor integrated circuit device
JPS60136989A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Write circuit for semiconductor memory device
JPS61121354A (en) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device
JPS61121353A (en) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> Composite type semiconductor device
JPH01123458A (en) * 1987-10-06 1989-05-16 Motorola Inc Means for combining complementary bipolar and complementary MOS and manufacturing method thereof
JPH05145023A (en) * 1991-11-22 1993-06-11 Mitsubishi Electric Corp Semiconductor device

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