JPS56100472A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56100472A JPS56100472A JP322380A JP322380A JPS56100472A JP S56100472 A JPS56100472 A JP S56100472A JP 322380 A JP322380 A JP 322380A JP 322380 A JP322380 A JP 322380A JP S56100472 A JPS56100472 A JP S56100472A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- regions
- type region
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
Landscapes
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain the device being similar to IGFET and making high-speed operation by a method wherein a semiconductor layer formed by turning polycrystalline material into the single- crystalline through application of energy is formed on a semiconductor substrate and reversely- conductive-type source and drain regions are installed in the semiconductor layer, while the regions are separated by a single-conductive-type region. CONSTITUTION:On the N<+> type Si substrate 11 is formed an N type region 12 wherein polycrystaline Si is turned into the single-crystalline by application of energy such as laser anneal and the region 12 is surrounded by an insulating region 13. In this constitution, a P type region 14 expanding in the horizontal direction is buried in the region 12, whereby the layer 12 is separated into two upper and lower regions, and the N type region 12a on the lower side is used as the source region, while the N type region 12b on the upper side is left in the condition of reduced density due to the presence of the region 14. Moreover, within the region 12, a P type region 15 contacting the end parts of the regions 12a, 12b and 14 is provided and the N type drain region 16 is formed therein. Then, a gate SiO2 film 17 is connected to the region 12b, the exposed surface of the region 15 and further to the end part of the region 16, and on this film a polycrystalline Si gate electrode 18 is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP322380A JPS56100472A (en) | 1980-01-16 | 1980-01-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP322380A JPS56100472A (en) | 1980-01-16 | 1980-01-16 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56100472A true JPS56100472A (en) | 1981-08-12 |
Family
ID=11551438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP322380A Pending JPS56100472A (en) | 1980-01-16 | 1980-01-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100472A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373980A (en) * | 1976-12-14 | 1978-06-30 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| JPS54158178A (en) * | 1978-06-02 | 1979-12-13 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5577174A (en) * | 1978-12-05 | 1980-06-10 | Mitsubishi Electric Corp | Insulating gate-type electric field-effective semiconductor device |
-
1980
- 1980-01-16 JP JP322380A patent/JPS56100472A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373980A (en) * | 1976-12-14 | 1978-06-30 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| JPS54158178A (en) * | 1978-06-02 | 1979-12-13 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5577174A (en) * | 1978-12-05 | 1980-06-10 | Mitsubishi Electric Corp | Insulating gate-type electric field-effective semiconductor device |
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