JPS56100577A - Solid image pickup device - Google Patents

Solid image pickup device

Info

Publication number
JPS56100577A
JPS56100577A JP305180A JP305180A JPS56100577A JP S56100577 A JPS56100577 A JP S56100577A JP 305180 A JP305180 A JP 305180A JP 305180 A JP305180 A JP 305180A JP S56100577 A JPS56100577 A JP S56100577A
Authority
JP
Japan
Prior art keywords
electric charge
storage electrode
under
control gate
qgamma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP305180A
Other languages
Japanese (ja)
Inventor
Koichi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP305180A priority Critical patent/JPS56100577A/en
Publication of JPS56100577A publication Critical patent/JPS56100577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To prevent the influence of the trap level under a storage electrode, by providing a control gate between the storage electrode and the overflow drain and by providing two regions different in potential under this control gate. CONSTITUTION:Electric charge under storage electrode 1 is abandoned to overflow drain 4 through control gate G3. Electric charge Qgamma is stored in the potential difference under control gate G3. This electric charge Qgamma is returned to storage electrode 1 and is stored together with signal electric charge generated by photoelectric conversion. A part of electric charge remains under storage electrode due to the influence of the trap level under storage electrode 1. Next, electric charge generated by photoelectric conversion is stored under storage electrode 1 together with residual electric charge. Electric charge except Qgamma is abandoned to overflow drain 4.
JP305180A 1980-01-17 1980-01-17 Solid image pickup device Pending JPS56100577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP305180A JPS56100577A (en) 1980-01-17 1980-01-17 Solid image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP305180A JPS56100577A (en) 1980-01-17 1980-01-17 Solid image pickup device

Publications (1)

Publication Number Publication Date
JPS56100577A true JPS56100577A (en) 1981-08-12

Family

ID=11546513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP305180A Pending JPS56100577A (en) 1980-01-17 1980-01-17 Solid image pickup device

Country Status (1)

Country Link
JP (1) JPS56100577A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001170A1 (en) * 1981-09-17 1983-03-31 Takeshita, Kaneyoshi Solid state image pickup device
JPS5874049A (en) * 1981-10-29 1983-05-04 Fujitsu Ltd Multiplexer
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state imaging device
JPS59190782A (en) * 1983-04-14 1984-10-29 Tech Res & Dev Inst Of Japan Def Agency Driving method of solid-state image pickup device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001170A1 (en) * 1981-09-17 1983-03-31 Takeshita, Kaneyoshi Solid state image pickup device
JPS5874049A (en) * 1981-10-29 1983-05-04 Fujitsu Ltd Multiplexer
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state imaging device
JPS59190782A (en) * 1983-04-14 1984-10-29 Tech Res & Dev Inst Of Japan Def Agency Driving method of solid-state image pickup device

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