JPS56103458A - Hybrid ic device - Google Patents

Hybrid ic device

Info

Publication number
JPS56103458A
JPS56103458A JP556380A JP556380A JPS56103458A JP S56103458 A JPS56103458 A JP S56103458A JP 556380 A JP556380 A JP 556380A JP 556380 A JP556380 A JP 556380A JP S56103458 A JPS56103458 A JP S56103458A
Authority
JP
Japan
Prior art keywords
semiconductor segment
thermistor
substrate
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP556380A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP556380A priority Critical patent/JPS56103458A/en
Publication of JPS56103458A publication Critical patent/JPS56103458A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To obtain the hybrid integrated circuit capable of compensating sufficiently an electrical characteristic by a method wherein a thermistor is mounted on a substrate, situated under a semiconductor segment, a heating element, and a temperature of the heating element is accurately conveyed to the thermistor. CONSTITUTION:When electrodes 23 and 25 made a pair are formed on a substrate 24, the electrode 25 on one side is usually situated under the semiconductor segment 21 which is to be mounted on the substrate 24. At this time, however, the electrode 25 is not fitted under the semiconductor segment but formed at an end of the substrate 24 same as the electrode 23. Then, the thermistor 27 is arranged situated between those electrodes 23, 25 and covered with an insulating paste 26 to allow the semiconductor segment 21 to be fixed on the paste. Thereafter, the electrodes formed on the semiconductor segment 21 are connected to the electrodes 23 and 25 respectively using an Al thin wire 22. Thus, the thermistor 27 compensating the temperature is brought close to the semiconductor segment to make the temperature compensation accurate.
JP556380A 1980-01-21 1980-01-21 Hybrid ic device Pending JPS56103458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP556380A JPS56103458A (en) 1980-01-21 1980-01-21 Hybrid ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP556380A JPS56103458A (en) 1980-01-21 1980-01-21 Hybrid ic device

Publications (1)

Publication Number Publication Date
JPS56103458A true JPS56103458A (en) 1981-08-18

Family

ID=11614665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP556380A Pending JPS56103458A (en) 1980-01-21 1980-01-21 Hybrid ic device

Country Status (1)

Country Link
JP (1) JPS56103458A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171152A (en) * 1983-03-17 1984-09-27 Nec Corp Semiconductor device
US4908696A (en) * 1986-09-19 1990-03-13 Hitachi, Ltd. Connector and semiconductor device packages employing the same
EP0852398A1 (en) * 1997-01-02 1998-07-08 AT&T Corp. Apparatus for heating and cooling an electronic device
EP1369915A3 (en) * 2002-06-07 2006-08-09 Heraeus Sensor Technology Gmbh Semiconductor device with integrated circuit, heat sink and temperature sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171152A (en) * 1983-03-17 1984-09-27 Nec Corp Semiconductor device
US4908696A (en) * 1986-09-19 1990-03-13 Hitachi, Ltd. Connector and semiconductor device packages employing the same
EP0852398A1 (en) * 1997-01-02 1998-07-08 AT&T Corp. Apparatus for heating and cooling an electronic device
EP1369915A3 (en) * 2002-06-07 2006-08-09 Heraeus Sensor Technology Gmbh Semiconductor device with integrated circuit, heat sink and temperature sensor

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